Methods of forming supporting substrates for cutting elements, and related methods of forming cutting elements

ABSTRACT

A method of forming a supporting substrate for a cutting element comprises forming a precursor composition comprising discrete WC particles, a binding agent, and discrete particles comprising Co, Al, and one or more of C and W. The precursor composition is subjected to a consolidation process to form a consolidated structure including WC particles dispersed in a homogenized binder comprising Co, Al, W, and C. A method of forming a cutting element, a cutting element, a related structure, and an earth-boring tool are also described.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.15/594,174, filed May 12, 2017, pending, the disclosure of which ishereby incorporated herein in its entirety by this reference.

TECHNICAL FIELD

Embodiments of the disclosure relate to supporting substrates forcutting elements, and to related cutting elements, structures,earth-boring tools, and methods of forming the supporting substrates andcutting elements.

BACKGROUND

Earth-boring tools for forming wellbores in subterranean earthformations may include a plurality of cutting elements secured to abody. For example, fixed-cutter earth-boring rotary drill bits (“dragbits”) include a plurality of cutting elements that are fixedly attachedto a bit body of the drill bit. Similarly, roller cone earth-boringrotary drill bits may include cones that are mounted on bearing pinsextending from legs of a bit body such that each cone is capable ofrotating about the bearing pin on which it is mounted. A plurality ofcutting elements may be mounted to each cone of the drill bit. Otherearth-boring tools utilizing cutting elements include, for example, corebits, bi-center bits, eccentric bits, hybrid bits (e.g., rollingcomponents in combination with fixed cutting elements), reamers, andcasing milling tools.

The cutting elements used in such earth-boring tools often include avolume of polycrystalline diamond (“PCD”) material on a substrate.Surfaces of the polycrystalline diamond act as cutting faces of theso-called polycrystalline diamond compact (“PDC”) cutting elements. PCDmaterial is material that includes inter-bonded grains or crystals ofdiamond material. In other words, PCD material includes direct,inter-granular bonds between the grains or crystals of diamond material.The terms “grain” and “crystal” are used synonymously andinterchangeably herein.

PDC cutting elements are generally formed by sintering and bondingtogether relatively small diamond (synthetic, natural or a combination)grains, termed “grit,” under conditions of high temperature and highpressure in the presence of a catalyst (e.g., cobalt, iron, nickel, oralloys and mixtures thereof) to form one or more layers (e.g., a“compact” or “table”) of PCD material. These processes are oftenreferred to as high temperature/high pressure (or “HTHP”) processes. Thesupporting substrate may comprise a cermet material (i.e., aceramic-metal composite material) such as, for example, cobalt-cementedtungsten carbide. In some instances, the PCD material may be formed onthe cutting element, for example, during the HTHP process. In suchinstances, catalyst material (e.g., cobalt) in the supporting substratemay be “swept” into the diamond grains during sintering and serve as acatalyst material for forming the diamond table from the diamond grains.Powdered catalyst material may also be mixed with the diamond grainsprior to sintering the grains together in an HTHP process. In othermethods, the diamond table may be formed separately from the supportingsubstrate and subsequently attached thereto.

Upon formation of the diamond table using an HTHP process, catalystmaterial may remain in interstitial spaces between the inter-bondedgrains of the PDC. The presence of the catalyst material in the PDC maycontribute to thermal damage in the PDC when the PDC cutting element isheated during use due to friction at the contact point between thecutting element and the formation. Accordingly, the catalyst material(e.g., cobalt) may be leached out of the interstitial spaces using, forexample, an acid or combination of acids (e.g., aqua regia).Substantially all of the catalyst material may be removed from the PDC,or catalyst material may be removed from only a portion thereof, forexample, from a cutting face of the PDC, from a side of the PDC, orboth, to a desired depth. However, a fully leached PDC is relativelymore brittle and vulnerable to shear, compressive, and tensile stressesthan is a non-leached PDC. In addition, it is difficult to secure acompletely leached PDC to a supporting substrate.

BRIEF SUMMARY

Embodiments described herein include supporting substrates for cuttingelements, and related cutting elements, structures, earth-boring tools,and methods of forming the supporting substrates and the cuttingelements. For example, in accordance with one embodiment describedherein, a method of forming a supporting substrate for a cutting elementcomprises forming a precursor composition comprising discrete WCparticles, a binding agent, and discrete particles comprising Co, Al,and one or more of C and W. The precursor composition is subjected to aconsolidation process to form a consolidated structure including WCparticles dispersed in a homogenized binder comprising Co, Al, W, and C.

In additional embodiments, a method of forming a cutting elementcomprises providing a supporting substrate comprising WC particlesdispersed within a homogenized binder comprising Co, Al, W, and C. Apowder comprising diamond particles is deposited directly on thesupporting substrate. The supporting substrate and the powder aresubjected to elevated temperatures and elevated pressures to diffuse aportion of the homogenized binder of the supporting substrate into thepowder and inter-bond the diamond particles. Portions of the homogenizedbinder within interstitial spaces between the inter-bonded diamondparticles are converted into a thermally stable material comprisingκ-carbide precipitates.

In further embodiments, a cutting element comprises a supportingsubstrate comprising WC particles dispersed in a homogenized bindercomprising Co, Al, W, and C. A cutting table is directly attached to anend of the supporting substrate and comprises inter-bonded diamondparticles, and a thermally stable material within interstitial spacesbetween the inter-bonded diamond particles. The thermally stablematerial comprises κ-carbide precipitates.

In yet further embodiments, a structure comprises a consolidatedstructure and a hard material structure directly attached to theconsolidated structure. The consolidated structure comprises WCparticles dispersed in a homogenized binder comprising Co, Al, W, and C.The hard material structure comprises inter-bonded diamond particles anda thermally stable material within interstitial spaces between theinter-bonded diamond particles. The thermally stable material comprisesκ-carbide precipitates.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified flow diagram depicting a method of forming asupporting substrate for a cutting element, in accordance withembodiments of the disclosure.

FIGS. 2A and 2B are simplified cross-sectional views of a container in aprocess of forming a cutting element, in accordance with embodiments ofthe disclosure

FIG. 3 is a partial cut-away perspective view of a cutting element, inaccordance with embodiments of the disclosure.

FIGS. 4 through 15 are side elevation views of different cuttingelements, in accordance with additional embodiments of the disclosure.

FIG. 16 is a perspective view of a bearing structure, in accordance withembodiments of the disclosure.

FIG. 17 is a perspective view of a die structure, in accordance withembodiments of the disclosure.

FIG. 18 is a perspective view of an embodiment of a fixed-cutterearth-boring rotary drill bit including a cutting element of thedisclosure.

FIG. 19 is a graphical representation illustrating changes to adifferential scanning calorimetry (DSC) curve of a partially homogenizedbinder facilitated through a supplemental homogenization process, inaccordance with embodiments of the disclosure.

FIG. 20 is a phase diagram illustrating the effects of pressure duringthe formation of a cutting element of the disclosure.

FIG. 21 is a phase diagram illustrating the effects of homogenizedbinder composition during the formation of a cutting element of thedisclosure.

DETAILED DESCRIPTION

The following description provides specific details, such as specificshapes, specific sizes, specific material compositions, and specificprocessing conditions, in order to provide a thorough description ofembodiments of the present disclosure. However, a person of ordinaryskill in the art would understand that the embodiments of the disclosuremay be practiced without necessarily employing these specific details.Embodiments of the disclosure may be practiced in conjunction withconventional fabrication techniques employed in the industry. Inaddition, the description provided below does not form a completeprocess flow for manufacturing a cutting element or earth-boring tool.Only those process acts and structures necessary to understand theembodiments of the disclosure are described in detail below. Additionalacts to form a complete cutting element or a complete earth-boring toolfrom the structures described herein may be performed by conventionalfabrication processes.

Drawings presented herein are for illustrative purposes only, and arenot meant to be actual views of any particular material, component,structure, device, or system. Variations from the shapes depicted in thedrawings as a result, for example, of manufacturing techniques and/ortolerances, are to be expected. Thus, embodiments described herein arenot to be construed as being limited to the particular shapes or regionsas illustrated, but include deviations in shapes that result, forexample, from manufacturing. For example, a region illustrated ordescribed as box-shaped may have rough and/or nonlinear features, and aregion illustrated or described as round may include some rough and/orlinear features. Moreover, sharp angles that are illustrated may berounded, and vice versa. Thus, the regions illustrated in the figuresare schematic in nature, and their shapes are not intended to illustratethe precise shape of a region and do not limit the scope of the presentclaims. The drawings are not necessarily to scale. Additionally,elements common between figures may retain the same numericaldesignation.

As used herein, the terms “comprising,” “including,” “having,” andgrammatical equivalents thereof are inclusive or open-ended terms thatdo not exclude additional, unrecited elements or method steps, but alsoinclude the more restrictive terms “consisting of” and “consistingessentially of” and grammatical equivalents thereof. As used herein, theterm “may” with respect to a material, structure, feature, or method actindicates that such is contemplated for use in implementation of anembodiment of the disclosure and such term is used in preference to themore restrictive term “is” so as to avoid any implication that other,compatible materials, structures, features, and methods usable incombination therewith should or must be excluded.

As used herein, spatially relative terms, such as “below,” “lower,”“bottom,” “above,” “over,” “upper,” “top,” and the like, may be used forease of description to describe one element's or feature's relationshipto another element(s) or feature(s) as illustrated in the figures.Unless otherwise specified, the spatially relative terms are intended toencompass different orientations of the materials in addition to theorientation depicted in the figures. For example, if materials in thefigures are inverted, elements described as “over” or “above” or “on” or“on top of” other elements or features would then be oriented “below” or“beneath” or “under” or “on bottom of” the other elements or features.Thus, the term “over” can encompass both an orientation of above andbelow, depending on the context in which the term is used, which will beevident to one of ordinary skill in the art. The materials may beotherwise oriented (e.g., rotated 90 degrees, inverted, flipped) and thespatially relative descriptors used herein interpreted accordingly.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items.

As used herein, the term “configured” refers to a size, shape, materialcomposition, material distribution, orientation, and arrangement of oneor more of at least one structure and at least one apparatusfacilitating operation of one or more of the structure and the apparatusin a predetermined way.

As used herein, the term “substantially” in reference to a givenparameter, property, or condition means and includes to a degree thatone of ordinary skill in the art would understand that the givenparameter, property, or condition is met with a degree of variance, suchas within acceptable manufacturing tolerances. By way of example,depending on the particular parameter, property, or condition that issubstantially met, the parameter, property, or condition may be at least90.0% met, at least 95.0% met, at least 99.0% met, at least 99.9% met,or even 100.0% met.

As used herein, the term “about” in reference to a given parameter isinclusive of the stated value and has the meaning dictated by thecontext (e.g., it includes the degree of error associated withmeasurement of the given parameter).

As used herein, the terms “earth-boring tool” and “earth-boring drillbit” mean and include any type of bit or tool used for drilling duringthe formation or enlargement of a wellbore in a subterranean formationand include, for example, fixed-cutter bits, roller cone bits,percussion bits, core bits, eccentric bits, bi-center bits, reamers,mills, drag bits, hybrid bits (e.g., rolling components in combinationwith fixed cutting elements), and other drilling bits and tools known inthe art.

As used herein, the term “polycrystalline compact” means and includesany structure comprising a polycrystalline material formed by a processthat involves application of pressure (e.g., compaction) to theprecursor composition or materials used to form the polycrystallinematerial. In turn, as used herein, the term “polycrystalline material”means and includes any material comprising a plurality of grains orcrystals of the material that are bonded directly together byinter-granular bonds. The crystal structures of the individual grains ofthe material may be randomly oriented in space within thepolycrystalline material.

As used herein, the term “inter-granular bond” means and includes anydirect atomic bond (e.g., covalent, metallic, etc.) between atoms inadjacent grains of hard material.

As used herein, the term “hard material” means and includes any materialhaving a Knoop hardness value of greater than or equal to about 3,000Kg_(f)/mm² (29,420 MPa). Non-limiting examples of hard materials includediamond (e.g., natural diamond, synthetic diamond, or combinationsthereof), and cubic boron nitride.

As used herein, the term “catalytic cobalt” means and includes thecatalytic crystalline form of cobalt (Co). In turn, the “catalyticcrystalline form” of Co refers to disordered face-centered-cubic (FCC)gamma (γ) phase (FCC (γ)) Co. FCC (γ) Co exhibits a “disordered”configuration when Co atoms of the FCC lattice are substituted withother (e.g., replacement) atoms at irregular positions. In contrast, FCC(γ) Co exhibits an “ordered” configuration when Co atoms of the FCClattice are substituted with other atoms at regular positions. Detectionof whether FCC (γ) Co exhibits a disordered configuration or an orderedconfiguration can be demonstrated using X-ray diffraction techniques orin detection of magnetic phases.

FIG. 1 is a simplified flow diagram illustrating a method 100 of forminga supporting substrate for a cutting element, in accordance withembodiments of the disclosure. As described in further detail below, themethod 100 includes a precursor composition formation process 102, and aconsolidation process 104. With the description as provided below, itwill be readily apparent to one of ordinary skill in the art that themethods described herein may be used in various applications. Themethods of the disclosure may be used whenever it is desired to form aconsolidated structure including particles of a hard material dispersedin a homogenized binder.

Referring to FIG. 1, the precursor composition formation process 102includes combining (e.g., mixing) a preliminary powder including cobalt(Co), aluminum (Al), and one or more of carbon (C) and tungsten (W) witha tungsten carbide (WC) powder, a binding agent, and, optionally, one ormore additive(s) to form a precursor composition. The preliminary powdermay, for example, comprise discrete alloy particles (e.g., discreteCo—Al—C alloy particles, discrete Co—Al—W alloy particles) and/ordiscrete elemental (e.g., non-alloy) particles (e.g., discrete elementalCo particles, discrete elemental Al particles, discrete C particles,discrete W particles). During the precursor composition formationprocess 102, the discrete particles (e.g., discrete alloy particlesand/or discrete elemental particles) of the preliminary powder may bedistributed relative to the discrete WC particles of the WC powder andthe additive(s) (if any) so as to facilitate the formation of aconsolidated structure (e.g., a supporting substrate) able to effectuatethe formation of a cutting element including a thermally stable cuttingtable (e.g., a thermally stable PDC table), as described in furtherdetail bellow.

The preliminary powder may include any amounts of Co, Al, and one ormore C and W able to facilitate the formation of a consolidatedstructure formed of and including WC particles and a homogenized binderincluding desired amounts of Co, Al, W, and C (as well as individualelement(s) of the additive(s), if any) through the consolidation process104. Accordingly, amounts of Co, Al, and one or more of C and W in thepreliminary powder (e.g., as effectuated by the formulations andrelative amounts of the discrete alloy particles and/or the discreteelemental particles thereof) may be selected at least partially based onamounts of W and C in the WC powder (e.g., as effectuated by theformulations and relative amounts of the discrete WC particles thereof)and amounts of the additive(s) (if any) facilitating the formation ofthe homogenized binder of the consolidated structure. In turn, asdescribed in further detail below, a material composition of thehomogenized binder (including the relative amounts of Co, Al, W, C, andany other element(s) therein) may be selected at least partially basedon desired melting properties of the homogenized binder, on desiredcatalytic properties of the homogenized binder for the formation of acompact structure (e.g., a cutting table, such as a PDC table) includinginter-bonded diamond particles, and on desired thermal stabilityproperties of the compact structure effectuated by the formation of athermally stable material from portions of the homogenized binderremaining within interstitial spaces between the inter-bonded diamondparticles following the formation thereof

By way of non-limiting example, the preliminary powder may include fromabout one (1) weight percent (wt %) Al to about 15.0 wt % Al, from about83 wt % Co to about to 98.75 wt % Co, and from about 0.25 wt % C toabout 2.0 wt % C. Relatively higher concentrations of Al in thepreliminary powder may, for example, enhance thermal stabilityproperties of a compact structure (e.g., a cutting table, such as a PDCtable) formed using a homogenized binder (e.g., a homogenized Co—Al—C-Walloy binder) subsequently formed from the precursor composition, butmay also increase and/or widen the melting temperature range of thehomogenized binder relative to homogenized binders having relativelylower Al concentrations. Relatively higher concentrations of Co in thepreliminary powder may, for example, enhance the catalytic properties(e.g., carbon solubility and liquid phase transport) of the subsequentlyformed homogenized binder for the formation of inter-bonded diamondparticles, but may also decrease the thermal stability of the compactstructure formed using the homogenized binder due to back-conversion ofthe inter-bonded diamond particles to other forms or phases of carbonfacilitated by excess (e.g., unreacted) catalytic Co present within thecompact structure during use and operation thereof. Relatively higherconcentrations of C in the preliminary powder may, for example, enhancethermal stability properties of the compact structure formed by thehomogenized binder through the formation of carbide precipitates.Elevated C level may modify (e.g., suppress) the melting characteristicsof the homogenized binder by modifying the melting and solidificationpaths toward monovarient and invariant reaction lines.

In some embodiments, the material composition of the preliminary powderis selected relative to the material composition of WC powder and anyadditive(s) to minimize amounts of catalytic Co within interstitialspaces of a compact structure (e.g., a cutting table, such as a PDCtable) to be formed using a homogenized binder subsequently formed fromthe precursor composition. For example, the preliminary powder mayinclude amounts of Al and one or more of C and W which, in combinationwith other elements from the WC powder and the additive(s) (if any),facilitate the formation of a homogenizing binder (e.g., a homogenizedCo—Al—C—W alloy binder) including a sufficient amount of Co tofacilitate the formation of a compact structure including inter-bondeddiamond particles without having any catalytic Co remain withininterstitial spaces of the compact structure following the formationthereof. The material composition of the preliminary powder may, forexample, be selected to facilitate the complete (e.g., 100 percent)reaction of catalytic Co resulting from the infiltration of thehomogenized binder into a volume of hard material (e.g., a volume ofdiamond powder). The amounts of Co, Al, and one or more of C and W inthe preliminary powder may also be selected to permit a meltingtemperature range of the subsequently-formed homogenized binder to bewithin a temperature range suitable for thermally treating (e.g.,sintering) the volume of hard material to form the compact structure. Insome embodiments, the preliminary powder includes about 86 wt % Co,about 13 wt % Al, and about 0.9 wt % C.

In additional embodiments, the material composition of the preliminarypowder is selected relative to the material compositions of the WCpowder and any additive(s) to facilitate the subsequent formation of ahomogenized binder having a relatively lower melting temperature rangeand/or relatively narrower melting temperature range than a homogenizedbinder formulated to minimize the amounts of catalytic Co remainingwithin interstitial spaces of a compact structure to be formed using thehomogenized binder. The material composition of the preliminary powdermay facilitate the partial reaction (e.g., less than 100 percent, suchas less than or equal to 90 percent, less than or equal to 80 percent,or less than or equal to 70 percent) of catalytic Co resulting from theinfiltration of the homogenized binder into a volume of hard material(e.g., a volume of diamond powder). Accordingly, the compact structuremay include catalytic Co within interstitial spaces thereof. However,the inter-bonded diamond particles of the compact structure may be atleast partially protected from the catalytic Co by one or more othermaterials (e.g., intermetallic compound precipitates, carbideprecipitates, etc.), as described in further detail below. In someembodiments, the preliminary powder includes about 89 wt % Co, about 9.2wt % Al, and about 0.8 wt % C.

In some embodiments, at least some (e.g., all) of the discrete particlesof the preliminary powder comprise discrete alloy particles individuallyformed of and including an alloy of Co, Al, and one or more of C and W.For example, at least some (e.g., all) of the discrete particles of thepreliminary powder may comprise discrete Co—Al—C alloy particlesindividually formed of and including an alloy of Co, Al, and C, and/orat least some (e.g., all) of the discrete particles of the preliminarypowder may comprise discrete Co—Al—W alloy particles individually formedof and including an alloy of Co, Al, and W. Each of the discrete alloyparticles may include substantially the same components (e.g., Co, Al,and one or more of C and W) and component ratios of as each other of thediscrete alloy particles, or one or more of the discrete alloy particlesmay include different components and/or different component ratios thanone or more other of the preliminary alloy particles, so long as thepreliminary powder as a whole includes desired and predetermined ratiosof Co, Al, and one or more of C and W. In some embodiments, thepreliminary powder is formed of and includes discrete Co—Al—C alloyparticles having substantially the same amounts of Co, Al, and C as oneanother. In additional embodiments, the preliminary powder is formed ofand includes discrete Co—Al—C alloy particles having different amountsof two or more of Co, Al, and C than one another. In furtherembodiments, the preliminary powder is formed of and includes discreteCo—Al—W alloy particles having substantially the same amounts of Co, Al,and W as one another. In yet further embodiments, the preliminary powderis formed of and includes discrete Co—Al—W alloy particles havingdifferent amounts of two or more of Co, Al, and W than one another. Instill further embodiments, the preliminary powder is formed of andincludes discrete Co—Al—C alloy particles and discrete Co—Al—W alloyparticles, wherein the discrete Co—Al—C alloy particles havesubstantially the same or different amounts of Co, Al, and C as oneanother and the discrete Co—Al—W alloy particles have substantially thesame or different amounts of Co, Al, and W as one another.

If included in the preliminary powder, the discrete alloy particles(e.g., discrete Co—Al—C alloy particles and/or discrete Co—Al—W alloyparticles) may be formed by conventional processes (e.g., ball millingprocesses, attritor milling processes, cryomilling processes, jetmilling processes, powder atomization processes, etc.), which are notdescribed herein. As a non-limiting example, an initial powder formed ofand including particles of Co, Al, and one or more C (e.g., lamp black,graphite, etc.) and W, alloys thereof, and/or combinations thereof maybe provided into an attritor mill containing mixing structures (e.g.,mixing spheres, mixing bars, etc.), and may then be subjected to amechanical alloying process until the discrete alloy particles areformed. During the mechanical alloying process collisions between themixing structures and the initial powder may cause particles ofdifferent materials (e.g., Co particles, Al particles, graphiteparticles, W particles, alloy particles, combinations thereof, etc.) tofracture and/or be welded or smeared together. Relatively largerparticles may fracture during the mechanical welding process andrelatively smaller particles may weld together, eventually formingdiscrete alloy particles each individually comprising a substantiallyhomogeneous mixture of the constituents of the initial powder insubstantially the same proportions of the initial powder. As anothernon-limiting example, an alloy material may be formed by conventionalmelting and mixing processes, and then the alloy material may be formedinto the discrete alloy particles by one or more conventionalatomization processes.

In additional embodiments, at least some (e.g., all) of the discreteparticles of the preliminary powder comprise discrete elementalparticles, such as one or more discrete elemental Co particles, discreteelemental Al particles, and discrete C particles (e.g., discretegraphite particles, discrete graphene particles, discrete fullereneparticles, discrete carbon nanofibers, discrete carbon nanotubes, etc.),and discrete elemental W particles. The preliminary powder may includeany amounts of the discrete elemental Co particles, the discreteelemental Al particles, the discrete C particles, and the discreteelemental W particles permitting the preliminary powder as a whole toinclude desired and predetermined ratios of Co, Al, C, and W. Ifincluded in the preliminary powder, the discrete elemental particles(e.g., discrete elemental Co particles, discrete elemental Al particles,discrete C particles, discrete elements W particles) may be formed byconventional processes (e.g., conventional milling processes), which arenot described herein.

The preliminary powder may include discrete alloy particles (e.g.,discrete Co—Al—C alloy particles and/or discrete Co—Al—W particles) butmay be substantially free of discrete elemental particles (e.g.,discrete elemental Co particles, discrete elemental Al particles,discrete C particles, and discrete elemental W particles); may includediscrete elemental particles (e.g., discrete elemental Co particles,discrete elemental Al particles, and one or more of discrete C particlesand discrete elemental W particles) but may be substantially free ofdiscrete alloy particles (e.g., discrete Co—Al—C alloy particles anddiscrete Co—Al—W particles); or may include a combination of discretealloy particles (e.g., discrete Co—Al—C alloy particles and/or discreteCo—Al—W alloy particles) and discrete elemental particles (e.g., one ormore of discrete elemental Co particles, discrete elemental Alparticles, discrete C particles, and discrete elemental W particles). Insome embodiments, the preliminary powder only includes discrete Co—Al—Calloy particles. In additional embodiments, the preliminary powder onlyincludes discrete elemental Co particles, discrete elemental Alparticles, and discrete C particles. In yet additional embodiments, thepreliminary powder only includes discrete Co—Al—W alloy particles. Instill additional embodiments, the preliminary powder only includesdiscrete elemental Co particles, discrete elemental Al particles, anddiscrete elemental W particles. In yet still additional embodiments, thepreliminary powder includes discrete Co—Al—C alloy particles, and one ormore (e.g., each) of discrete elemental Co particles, discrete elementalAl particles, and discrete C particles. In further embodiments, thepreliminary powder includes discrete Co—Al—W alloy particles, and one ormore (e.g., each) of discrete elemental Co particles, discrete elementalAl particles, and discrete elemental W particles. In yet furtherembodiments, the preliminary powder only includes discrete Co—Al—W alloyparticles and discrete Co—Al—C alloy particles. In still furtherembodiments, the preliminary powder includes discrete Co—Al—W alloyparticles, discrete Co—Al—C alloy particles, and one or more (e.g.,each) of discrete elemental Co particles, discrete elemental Alparticles, discrete C particles, and discrete elemental W particles.

Each of the discrete particles (e.g., discrete alloy particles and/ordiscrete elemental particles) of the preliminary powder may individuallyexhibit a desired particle size, such as a particle size less than orequal to about 1000 micrometers (um). The discrete particles maycomprise, for example, one or more of discrete micro-sized compositeparticles and discrete nano-sized composite particles. As used herein,the term “micro-sized” means and includes a particle size with a rangeof from about one (1) μm to about 1000 μm, such as from about 1 μm toabout 500 μm, from about 1 μm to about 100 μm, or from about 1 μm toabout 50 μm. As used herein, the term “nano-sized” means and includes aparticle size of less than 1 μm, such as less than or equal to about 500nanometers (nm), or less than or equal to about 250 nm. In addition,each of the discrete particles may individually exhibit a desired shape,such as one or more of a spherical shape, a hexahedral shape, anellipsoidal shape, a cylindrical shape, a conical shape, or an irregularshape.

The discrete particles (e.g., discrete alloy particles and/or discreteelemental particles) of the preliminary powder may be monodisperse,wherein each of the discrete particles exhibits substantially the samesize and substantially the same shape, or may be polydisperse, whereinat least one of the discrete particles exhibits one or more of adifferent particle size and a different shape than at least one other ofthe discrete particles. In some embodiments, the discrete particles ofthe preliminary powder have a multi-modal (e.g., bi-modal, tri-modal,etc.) particle (e.g., grain) size distribution. For example, thepreliminary powder may include a combination of relatively larger,discrete particles and relatively smaller, discrete particles. Themulti-modal particle size distribution of the preliminary powder may,for example, provide the precursor composition with desirable particlepacking characteristics for the subsequent formation of a consolidatedstructure (e.g., supporting substrate) therefrom, as described infurther detail below. In additional embodiments, the preliminary powderhas a mono-modal particle size distribution. For example, all of thediscrete particles of the preliminary powder may exhibit substantiallythe same particle size.

The WC particles of the WC powder may include stoichiometric quantitiesor near stoichiometric quantities of W and C. Relative amounts of W andC in the discrete WC particles may be selected at least partially basedon amounts and material compositions of the discrete particles of thepreliminary powder, the discrete WC particles, and the additive(s) (ifany) facilitating the formation of a consolidated structure (e.g.,supporting substrate) formed of and including WC particles and ahomogenized binder including desirable and predetermined amounts of Co,Al, W, and C (as well as individual elements of additive(s), if any)through the consolidation process 104. In some embodiments, each of thediscrete WC particles of the WC powder includes stoichiometric amountsof W and C. In additional embodiments, one or more of the discrete WCparticles of the WC powder include an excess amount of C than thatstoiciometrically required to form WC. In further embodiments, one ormore of the discrete WC particles of the WC powder includes an excessamount of W than that stoiciometrically required to form WC.

Each of the discrete WC particles of the WC powder may individuallyexhibit a desired particle size, such as a particle size less than orequal to about 1000 μm. The discrete WC particles may comprise, forexample, one or more of discrete micro-sized WC particles and discretenano-sized WC particles. In addition, each of the discrete WC particlesmay individually exhibit a desired shape, such as one or more of aspherical shape, a hexahedral shape, an ellipsoidal shape, a cylindricalshape, a conical shape, or an irregular shape.

The discrete WC particles of the WC powder may be monodisperse, whereineach of the discrete WC particles exhibits substantially the same sizeand shape, or may be polydisperse, wherein at least one of the discreteWC particles exhibits one or more of a different particle size and adifferent shape than at least one other of the discrete WC particles. Insome embodiments, the WC powder has a multi-modal (e.g., bi-modal,tri-modal, etc.) particle (e.g., grain) size distribution. For example,the WC powder may include a combination of relatively larger, discreteWC particles and relatively smaller, discrete WC particles. Inadditional embodiments, the WC powder has a mono-modal particle sizedistribution. For example, all of the discrete WC particles of the WCpowder may exhibit substantially the same particle size.

The WC powder, including the discrete WC particles thereof, the may beformed by conventional processes, which are not described herein.

The binding agent may comprise any material permitting the precursorcomposition to retain a desired shape during subsequent processing, andwhich may be removed (e.g., volatilized off) during the subsequentprocessing. By way of non-limiting example, the binding agent maycomprise an organic compound, such as a wax (e.g., a paraffin wax). Insome embodiments, the binding agent of the precursor composition is aparaffin wax.

The additive(s), if present, may comprise any material(s) formulated toimpart a consolidated structure (e.g., supporting substrate)subsequently formed from the precursor composition with one or moredesirable material properties (e.g., fracture toughness, strength,hardness, hardenability, wear resistance, coefficient of thermalexpansions, thermal conductivity, corrosion resistance, oxidationresistance, ferromagnetism, etc.), and/or that impart a homogenizedbinder of the subsequently formed consolidated structure with a materialcomposition facilitating the formation of a compact structure (e.g., acutting table, such as a PDC table) having desired properties (e.g.,wear resistance, impact resistance, thermal stability, etc.) using theconsolidated structure. By way of non-limiting example, the additive(s)may comprise one or more elements of one or more of Group IIIA (e.g.,boron (B), aluminum (Al)); Group IVA (e.g., carbon (C)); Group IVB(e.g., titanium (Ti), zirconium (Zr), hafnium (Hf)); Group VB (e.g.,vanadium (V), niobium (Nb), tantalum (Ta)); Group VIB (e.g., chromium(Cr), molybdenum (Mo), tungsten (W)); Group VIIB (e.g., manganese (Mn),rhenium (Re)); Group VIIIB (e.g., iron (Fe), ruthenium (Ru), cobalt(Co), rhodium (Rh), iridium (Ir), nickel (Ni)); Group IB (e.g., copper(Cu), Silver (Ag), gold (Au)); and Group IIB (e.g., zinc (Zn), cadmium(Cd)) of the Periodic Table of Elements. In some embodiments, theadditive(s) comprise discrete particles each individually including oneor more of B, Al, C, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru,Co, Rh, Ir, Ni, Cu, Ag, Au, Zn, and Cd.

Amounts of the preliminary powder, the WC powder, the binding agent, andthe additive(s) (if any) employed to form the precursor composition maybe selected at least partially based on the configurations (e.g.,material compositions, sizes, shapes) of the preliminary powder, the WCpowder, and the additive(s) (if any) facilitating the formation of aconsolidated structure formed of and including WC particles and ahomogenized binder including desired and predetermined amounts of Co,Al, W, and C (as well as individual element(s) of the additive(s), ifany) through the consolidation process 104. As a non-limiting example,the precursor composition may comprise from about 5 wt % to about 15 wt% of the preliminary powder, from about 85 wt % to about 95 wt % of theWC powder, from about 0 wt % to about 5 wt % of the additive(s), and aremainder of the binding agent (e.g., paraffin wax). If the preliminarypowder only includes discrete Co—Al—C particles, the precursorcomposition may, for example, include from about 5 wt % to about 15 wt %discrete preliminary particles, from about 85 wt % to about 95 wt %discrete WC particles, from about 0 wt % to about 5 wt % additive(s),and a remainder of a binding agent. If the preliminary powder onlyincludes discrete elemental Co particles, discrete elemental Alparticles, and discrete C particles, the precursor composition may, forexample, include from about 4 wt % to about 15 wt % discrete elementalCo particles, from about 0.05 wt % to about 3 wt % discrete elemental Alparticles, from about 0.013 wt % to about 0.3 wt % discrete C particles,from about 85 wt % to about 95 wt % discrete WC particles, from about 0wt % to about 5 wt % additive(s), and a remainder of a binding agent. Insome embodiments, the precursor composition comprises about 12 wt %Co—Al—C particles, and about 88 wt % discrete WC particles. Inadditional embodiments, the precursor composition comprises about 10.3wt % discrete elemental Co particles, about 1.6 wt % discrete elementalAl particles, about 0.1 wt % discrete C particles, and about 88 wt %discrete WC particles. In further embodiments, the precursor compositioncomprises about 10.7 wt % discrete elemental Co particles, about 1.2 wt% discrete elemental Al particles, about 0.1 wt % discrete C particles,and about 88 wt % discrete WC particles.

The precursor composition may be formed by mixing the preliminarypowder, the WC powder, the binding agent, the additive(s) (if any), andat least one fluid material (e.g., acetone, heptane, etc.) formulated todissolve and disperse the binding agent using one or more conventionalprocesses (e.g., conventional milling processes, such as ball millingprocesses, attritor milling processes, cryomilling processes, jetmilling processes, etc.) to form a mixture thereof. The preliminarypowder, the WC powder, the binding agent, the additive(s) (if any), andthe fluid material may be combined in any order. In some embodiments,the preliminary powder and the WC powder are combined (e.g., using afirst milling process), and then the binding agent and fluid materialare combined with the resulting mixture (e.g., using a second millingprocess). During the mixing process, collisions between differentparticles (e.g., the discrete particles of the preliminary powder, thediscrete WC particles of the WC powder, the additive particles (if any),etc.) may cause at least some of the different particles to fractureand/or become welded or smeared together. For example, during the mixingprocess at least some materials (e.g., elements, alloys) of the discreteparticles of the preliminary powder may be transferred to surfaces ofthe WC particles of the WC powder to form composite particles comprisingWC coated with an alloy comprising Co, Al, and one or more of C and W.Thereafter, the fluid material may be removed (e.g., evaporated),leaving the binding agent on and around any remaining discrete particlesof the preliminary powder, any remaining discrete WC particles of the WCpowder, any composite particles (e.g., particles comprising WC coatedwith an alloy comprising Co, Al, and one or more of C and W), anyremaining additive particles, and any other particles comprisingconstituents of the discrete particles of the preliminary powder, thediscrete WC particles of the WC powder, and the additive(s).

With continued reference to FIG. 1, following the precursor compositionformation process 102, the precursor composition is subjected to theconsolidation process 104 to form a consolidated structure including WCparticles dispersed within a homogenized binder. The homogenized bindermay, for example, comprise a substantially homogeneous alloy of Co, Al,W, and C, as well as element(s) of one or more additive(s) (if any)present in the precursor composition. In some embodiments, thehomogenized binder comprises a homogenized Co—Al—W—C alloy. Amounts ofCo, Al, W, C, and other elements (if any) in the homogenized binder mayat least partially depend on the amounts of Co, Al, W, C, and otherelements (if any) included in the precursor composition. For example,the homogenized binder may include substantially the same amounts of atleast Co and Al as the precursor composition, and modified amounts of atleast W and C resulting from dissolution of W from the WC particlesduring the consolidation process 104 and the migration from and/ormaintenance of C of different components (e.g., the Co—Al—C alloyparticles, the WC particles, etc.) during the consolidation process 104.

The consolidated structure (e.g., supporting substrate) may be formed toexhibit any desired dimensions and any desired shape. The dimensions andshape of the consolidated structure may at least partially depend upondesired dimensions and desired shapes of a compact structure (e.g., acutting table, such as a PDC table) to subsequently be formed on and/orattached to the consolidated structure, as described in further detailbelow. In some embodiments, the consolidated structure is formed toexhibit a cylindrical column shape. In additional embodiments, theconsolidated structure is formed to exhibit a different shape, such as adome shape, a conical shape, a frusto conical shape, a rectangularcolumn shape, a pyramidal shape, a frusto pyramidal shape, a fin shape,a pillar shape, a stud shape, or an irregular shape. Accordingly, theconsolidated structure may be formed to exhibit any desired lateralcross-sectional shape including, but not limited to, a circular shape, asemicircular shape, an ovular shape, a tetragonal shape (e.g., square,rectangular, trapezium, trapezoidal, parallelogram, etc.), a triangularshape, an elliptical shape, or an irregular shape.

The consolidation process 104 may include forming the precursorcomposition into green structure having a shape generally correspondingto the shape of the consolidated structure, subjecting the greenstructure to at least one densification process (e.g., a sinteringprocess, a hot isostatic pressing (HIP) process, a sintered-HIP process,a hot pressing process, etc.) to form a consolidated structure includingWC particles dispersed within an at least partially (e.g.,substantially) homogenized binder, and, optionally, subjecting theconsolidated structure to at least one supplemental homogenizationprocess to further homogenize the at least partially homogenized binder.As used herein, the term “green” means unsintered. Accordingly, as usedherein, a “green structure” means and includes an unsintered structurecomprising a plurality of particles, which may be held together byinteractions between one or more materials of the plurality of particlesand/or another material (e.g., a binder).

The precursor composition may be formed into the green structure throughconventional processes, which are not described in detail herein. Forexample, the precursor composition may be provided into a cavity of acontainer (e.g., canister, cup, etc.) having a shape complementary to adesired shape (e.g., a cylindrical column shape) of the consolidatedstructure, and then the precursor composition may be subjected to atleast one pressing process (e.g., a cold pressing process, such as aprocess wherein the precursor composition is subjected to compressivepressure without substantially heating the precursor composition) toform the green structure. The pressing process may, for example, subjectthe precursor composition within the cavity of the container to apressure greater than or equal to about 10 tons per square inch(tons/in²), such as within a range of from about 10 tons/in² to about 30tons/in².

Following formation the formation of the green structure, the bindingagent may be removed from the green structure. For example, the greenstructure may be dewaxed by way of vacuum or flowing hydrogen at anelevated temperature. The resulting (e.g., dewaxed) structure may thenbe subjected to a partial sintering (e.g., pre-sintering) process toform a brown structure having sufficient strength for the handlingthereof

Following the formation of the brown structure, the brown structure maybe subjected to a densification process (e.g., a sintering process, ahot isostatic pressing (HIP) process, a sintered-HIP process, a hotpressing process, etc.) that applies sufficient heat and sufficientpressure to the brown structure to form the consolidated structureincluding the WC particles dispersed in the at least partiallyhomogenized binder. By way of non-limiting example, the brown structuremay be wrapped in a sealing material (e.g., graphite foil), and may thenbe placed in a container made of a high temperature, self-sealingmaterial. The container may be filled with a suitable pressuretransmission medium (e.g., glass particles, ceramic particles, graphiteparticles, salt particles, metal particles, etc.), and the wrapped brownstructure may be provided within the pressure transmission medium. Thecontainer, along with the wrapped brown structure and pressuretransmission medium therein, may then be heated to a consolidationtemperature facilitating the formation of the homogenized binder (e.g.,the homogenized Co—Al—W—C alloy binder) under isostatic (e.g., uniform)pressure applied by a press (e.g., a mechanical press, a hydraulicpress, etc.) to at least partially (e.g., substantially) consolidate thebrown structure and form the consolidated structure. The consolidationtemperature may be a temperature greater than the solidus temperature ofat least the discrete particles (e.g., discrete alloy particles and/ordiscrete elemental particles) of the preliminary powder used to form thebrown structure (e.g., a temperature greater than or equal to theliquidus temperature of the discrete particles, a temperature betweenthe solidus temperature and the liquidus temperature of the discreteparticles, etc.), and the applied pressure may be greater than or equalto about 10 megapascals (MPa) (e.g., greater than or equal to about 50MPa, greater than or equal to about 100 MPa, greater than or equal toabout 250 MPa, greater than or equal to about 500 MPa, greater than orequal to about 750 MPa, greater than or equal to about 1.0 gigapascals(GPa), etc.). During the densification process, one or more elements ofthe WC particles and/or additive(s) (if any) present in the brownstructure may diffuse into and homogeneously intermix with moltenCo—Al—C alloy to form the at least partially homogenized binder (e.g.,homogenized Co—Al—W—C binder) of the consolidated structure.

As previously mentioned, following formation, the consolidated structuremay be subjected to a supplemental homogenization process to furtherhomogenize the at least partially homogenized binder thereof. Ifperformed, the supplemental homogenization process may heat theconsolidated structure to one or more temperatures above the liquidustemperature of the at least partially homogenized binder thereof for asufficient period of time to reduce (e.g., substantially eliminate)macrosegregation within the at least partially homogenized binder andprovide the resulting further homogenized binder with a single (e.g.,only one) melting temperature. In some embodiments, such as inembodiments wherein the preliminary powder employed to form theconsolidated structure comprises discrete elemental particles (e.g.,discrete elemental Co particles, discrete elemental Al particles,discrete C particles, discrete elemental W particles) the at leastpartially homogenized binder of the consolidated structure may havemultiple (e.g., at least two) melting temperatures following thedensification process due to one or more regions of at least partiallyhomogenized binder exhibiting different material composition(s) than oneor more other regions of at least partially homogenized binder. Suchdifferent regions may, for example, form as a result of efficacy marginsin source powder mixing and cold consolidation. In such embodiments, thesupplemental homogenization process may substantially melt andhomogenize the at least partially homogenized binder to remove theregions exhibiting different material composition(s) and provide thefurther homogenized binder with only one melting point. Providing thehomogenized binder of the consolidated structure with only one meltingpoint may be advantageous for the subsequent formation of a cuttingtable using the consolidated structure, as described in further detailbelow. In additional embodiments, such as in embodiments wherein the atleast partially homogenized binder of the consolidated structure isalready substantially homogeneous (e.g., does not include regionsexhibiting different material composition(s) than other regions thereof)following the densification process, the supplemental homogenizationprocess may be omitted.

FIG. 19 is a graphical representation of differential scanningcalorimetry (DSC) melting curves for a partially homogenized Co—Al—W—Calloy binder (i.e., the “as-sintered” DSC melting curve shown in FIG.19) formed by sintering a precursor composition comprising 10.3 wt %discrete elemental Co particles, 1.6 wt % discrete elemental Alparticles, 0.1 wt % discrete C particles, and 88 wt % discrete WCparticles; and for a further homogenized Co—Al—W—C alloy binder (i.e.,the “homogenized” DSC melting curve shown in FIG. 19) formed bysubjecting the partially homogenized Co—Al—W—C alloy binder to asupplemental homogenization process. The partially homogenized Co—Al—W—Calloy binder was formed by subjecting the precursor composition to adensification process that included sintering the precursor compositionat a temperature of about 1400° C. After cooling, the partiallyhomogenized Co—Al—W—C alloy binder was subjected to a supplementalhomogenization process that included re-heating the precursorcomposition to a temperature of about 1500° C. to form the furtherhomogenized Co—Al—W—C alloy binder. As shown in FIG. 19, the partiallyhomogenized Co—Al—W—C alloy binder exhibited two (2) distinct meltingpoints, whereas the further homogenized Co—Al—W—C alloy binder exhibitedonly one (1) melting point.

Consolidated structures (e.g., supporting substrates) formed inaccordance with embodiments of the disclosure may be used to formcutting elements according to embodiments of the disclosure. Forexample, FIGS. 2A and 2B are simplified cross-sectional viewsillustrating embodiments of a method of forming a cutting elementincluding a cutting table attached to a supporting substrate. With thedescription provided below, it will be readily apparent to one ofordinary skill in the art that the methods described herein may be usedin various devices. In other words, the methods of the disclosure may beused whenever it is desired to form a cutting table, such as a diamondtable (e.g., PDC table), of a cutting element.

Referring to FIG. 2A, a diamond powder 202 may be provided within thecontainer 200, and a supporting substrate 204 may be provided directlyon the diamond powder 202. The container 200 may substantially surroundand hold the diamond powder 202 and the supporting substrate 204. Asshown in FIG. 2A, the container 200 may include an inner cup 208 inwhich the diamond powder 202 and a portion of the supporting substrate204 may be disposed, a bottom end piece 206 in which the inner cup 208may be at least partially disposed, and a top end piece 210 surroundingthe supporting substrate 204 and coupled (e.g., swage bonded) to one ormore of the inner cup 208 and the bottom end piece 206. In additionalembodiments, the bottom end piece 206 may be omitted (e.g., absent).

The diamond powder 202 may be formed of and include discrete diamondparticles (e.g., discrete natural diamond particles, discrete syntheticdiamond particles, combinations thereof, etc.). The discrete diamondparticles may individually exhibit a desired grain size. The discretediamond particles may comprise, for example, one or more of micro-sizeddiamond particles and nano-sized diamond particles. In addition, each ofthe discrete diamond particles may individually exhibit a desired shape,such as at least one of a spherical shape, a hexahedral shape, anellipsoidal shape, a cylindrical shape, a conical shape, or an irregularshape. In some embodiments, each of the discrete diamond particles ofthe diamond powder 202 exhibits a substantially spherical shape. Thediscrete diamond particles may be monodisperse, wherein each of thediscrete diamond particles exhibits substantially the same materialcomposition, size, and shape, or may be polydisperse, wherein at leastone of the discrete diamond particles exhibits one or more of adifferent material composition, a different particle size, and adifferent shape than at least one other of the discrete diamondparticles. The diamond powder 202 may be formed by conventionalprocesses, which are not described herein.

The supporting substrate 204 comprises a consolidated structure formedin accordance with the methods previously described herein withreference to FIG. 1. For example, the supporting substrate 204 maycomprise a consolidated structure including WC particles dispersedwithin a homogenized binder (e.g., a substantially homogeneous alloy)comprising Co, Al, W, C, and, optionally, one or more other element(s).By way of non-limiting example, the consolidated structure may includefrom about 85 wt % to about 95 wt % WC particles, from about 5 wt % toabout 15 wt % homogenized Co—Al—W—C binder, and from about 0 wt % toabout 5 wt % of the additive(s). In some embodiments, the consolidatedstructure may include about 88 wt % WC particles, and about 12 wt %homogenized Co—Al—W—C binder. The homogenized Co—Al—W—C binder of thesupporting substrate 204 may, for example, comprise from about 66 wt %Co to about 90 wt % Co, from about 5.0 wt % Al to about 15 wt % Al, fromabout 0.1 wt % C to about 0.2 wt % C, and from about 5.0 wt % W to about30 wt % W.

Referring next to FIG. 2B, the diamond powder 202 (FIG. 2A) and thesupporting substrate 204 may be subjected to HTHP processing to form acutting table 212. The HTHP processing may include subjecting thediamond powder 202 and the supporting substrate 204 to elevatedtemperatures and elevated pressures in a directly pressurized and/orindirectly heated cell for a sufficient time to convert the discretediamond particles of the diamond powder 202 into inter-bonded diamondparticles. As described in further detail below, the operatingparameters (e.g., temperatures, pressures, durations, etc.) of the HTHPprocessing at least partially depend on the material compositions of thesupporting substrate 204 (including the material composition of thehomogenized binder thereof) and the diamond powder 202. As anon-limiting example, temperatures within the heated, pressurized cellmay be greater than the solidus temperature (e.g., greater than thesolidus temperature and less than or equal to the liquidus temperature,greater than or equal to the liquidus temperature, etc.) of thehomogenized binder of the supporting substrate 204, and pressures withinthe heated press may be greater than or equal to about 2.0 GPa (e.g.,greater than or equal to about 3.0 GPa, such as greater than or equal toabout 4.0 GPa, greater than or equal to about 5.0 GPa, greater than orequal to about 6.0 GPa, greater than or equal to about 7.0 GPa, greaterthan or equal to about 8.0 GPa, or greater than or equal to about 9.0GPa). In addition, the diamond powder 202 and the supporting substrate204 may be held at such temperatures and pressures for a sufficientamount of time to facilitate the inter-bonding of the discrete diamondparticles of the diamond powder 202, such as a period of time betweenabout 30 seconds and about 20 minutes.

During the HTHP processing, the homogenized binder of the supportingsubstrate 204 melts and a portion thereof is swept (e.g., masstransported, diffused) into the diamond powder 202 (FIG. 2A). Asdescribed in further detail below, the homogenized binder received bythe diamond powder 202 catalyzes the formation of inter-granular bondsbetween the discrete diamond particles, and also facilitates theformation of a thermally stable material within interstitial spacesbetween the inter-bonded diamond particles of the cutting table 212. Thethermally stable material may render the cutting table 212 thermallystable without needing to leach the cutting table 212. For example, thethermally stable material may not significantly promote carbontransformations (e.g., graphite-to-diamond or vice versa) as compared toconventional cutting tables including inter-bonded diamond particlessubstantially exposed to catalyst materials (e.g., catalytic Co) withininterstitial spaces between the inter-bonded diamond particles.Accordingly, the intermetallic and carbide material may render thecutting table 212 more thermally stable than conventional cuttingtables.

Since the diamond powder 202 (FIG. 2A) is provided directly on thesupporting substrate 204, the types, amounts, and distributions ofindividual elements swept into the diamond powder 202 during the HTHPprocessing is substantially the same as the types, amounts, anddistributions of individual elements of the homogenized binder of thesupporting substrate 204. Put another way, the material composition(including the types, amounts, and distributions of the individualelements thereof) of the homogenized binder diffused into the diamondpowder 202 during the HTHP processing to form the cutting table 212 issubstantially the same as the material composition of homogenized binderwithin the supporting substrate 204 prior to the HTHP processing. Forexample, if the homogenized binder of the supporting substrate 204comprises a ratio of Co to Al of about 9:1, a ratio of Co to Al sweptinto to the diamond powder 202 during the HTHP processing will also beabout 9:1. Accordingly, providing the diamond powder 202 directly on thesupporting substrate 204 may ensure that desired and predetermined sweepchemistries are provided into the diamond powder 202 during the HTHPprocessing.

In addition, providing the diamond powder 202 (FIG. 2A) directly on thesupporting substrate 204 may reduce melting-point-based complexitiesassociated with providing desired sweep chemistries into the diamondpowder 202 during the HTHP processing as compared to configurationswherein a structure having a different material composition than thehomogenized binder of the supporting substrate 204 is provided betweenthe diamond powder 202 and the supporting substrate 204. For example,providing the diamond powder 202 directly on the supporting substrate204 may permit a desired material composition (e.g., the materialcomposition of the homogenized binder of the supporting substrate 204)to be swept into the diamond powder 202 using a single temperature(e.g., the melting temperature of the homogenized binder) and/or arelatively narrower temperature range, whereas providing a structurebetween the diamond powder 202 and the supporting substrate 204 requireexposing the diamond powder 202, the structure, and the supportingsubstrate 204 to multiple temperatures (e.g., the melting temperature ofthe structure, and the melting temperature of the homogenized binder ofthe supporting substrate 204) and/or a relatively wider temperaturerange to permit a desired material composition (e.g., a combination ofthe material compositions of the structure and the homogenized binder ofthe supporting substrate 204) to be swept into the diamond powder 202during the HTHP processing.

During the HTHP processing, the homogenized binder (e.g., homogenizedCo—Al—W—C alloy binder) of the supporting substrate 204 diffuses intothe diamond powder 202

(FIG. 2A) and catalyzes diamond nucleation and growth. At least the Co(as well as any other catalyzing elements, such as Fe and/or Ni) of thehomogenized binder received by diamond powder 202 promotes the formationof the inter-bonded diamond particles of the cutting table 212.Depending on the amount of Co included in the homogenized binder,substantially all of the Co swept into the diamond powder 202 may bereacted during the formation of the cutting table 212, or only a portionof the Co swept into the diamond powder 202 may be reacted during theformation of the cutting table 212. The material composition of thehomogenized binder of the supporting substrate 204 may be selected tocontrol the amount of catalytic Co that remains following the formationof the cutting table 212. In some embodiments, the material compositionof the homogenized binder is selected such that about 100 percent of theCo received by the diamond powder 202 is reacted during the formation ofthe cutting table 212. Thus, the cutting table 212 may be substantiallyfree of catalytic Co capable of promoting carbon transformations (e.g.,graphite-to-diamond or vice versa) during normal use and operation ofthe cutting table 212. In additional embodiments, the materialcomposition of the homogenized binder is selected such that less than100 percent (e.g., less than or equal to about 90 percent, less than orequal to about 80 percent, less than or equal to about 70 percent, lessthan or equal to about 60 percent, etc.) of the Co of the homogenizedbinder swept into the diamond powder 202 from the supporting substrate204 is reacted during the formation of the cutting table 212. Thus, thecutting table 212 may include some catalytic Co. While such a materialcomposition of the homogenized binder may permit the presence ofcatalytic Co in the cutting table 212, the material composition mayprovide the homogenized binder with desirable properties (e.g., lowermelting temperatures, and/or smaller melting temperature ranges) and/orof one or more desired materials (e.g., desired carbide precipitates)within interstitial spaces of the cutting table 212. In addition, asdescribed in further detail below, inter-bonded diamond particles of thecutting table 212 may be at least partially protected from any catalyticCo (e.g., by carbide precipitates, and/or other precipitates) duringnormal use and operation of the cutting table 212. The amount of Co inthe homogenized binder of the supporting substrate 204 (and, hence, theamount of catalytic Co (if any) remaining in the cutting table 212following the formation thereof) may be controlled (e.g., increased ordecreased) by controlling the amounts of other elements (e.g., Al, W, C,additional elements, etc.) included in the homogenized binder. By way ofnon-limiting example, an increase in the amount of Al included in thehomogenized binder may decrease the amount of catalytic Co remaining inthe cutting table 212 (but may also increase the melting temperatureand/or melting temperature range of the homogenized binder).

As previously mentioned, the HTHP processing heats the diamond powder202 and the supporting substrate 204 to at least one temperature greaterthan the solidus temperature (e.g., to at least the liquidustemperature) of the homogenized binder of the supporting substrate 204.The temperature(s) (e.g., sintering temperature(s)) employed during theHTHP processing to form the cutting table 212 at least partially dependon the pressure(s) employed during the HTHP processing, and on thematerial composition of the homogenized binder of the supportingsubstrate 204. As described in further detail below, employingpressure(s) above atmospheric pressure (1 atm) during the HTHPprocessing may affect (e.g., shift) metastability lines (e.g., phaseboundaries) of the liquid (L)+diamond (D)+metal carbide (MC) phasefield, which may influence (e.g., compel the increase of) thetemperature(s) employed to form the cutting table 212. In addition, asalso described in further detail below, the material composition of thehomogenized binder of the supporting substrate 204 may affect (e.g.,increase, decrease) the melting temperature(s) of the homogenizedbinder, and may also affect (e.g., shift) the metastability lines of theL+D+MC+E2₁-type phase carbide (κ-carbide) phase field, which may alsoimpact (e.g., compel the increase of) the temperature(s) employed toform the cutting table 212.

FIG. 20 is a phase diagram illustrating how different pressures employedduring the HTHP processing may at least affect the range (e.g.,boundaries) of the L+D+MC phase field during the formation of thecutting table 212 (FIG. 2B), and hence, the temperature(s) employedduring the HTHP processing to form the cutting table 212. Thehomogenized binder (e.g., homogenized Co—Al—W—C alloy binder) of thesupporting substrate 204 (FIG. 2B) generally melts at atmosphericpressure during HTHP processing. However, after the molten homogenizedbinder diffuses into and fills the pore space of the diamond powder 202(FIG. 2A), a hydrostatic condition is met (e.g., negligible deviotoriccomponent) and the molten homogenized binder adjacent diamond particlesof diamond powder 202 (FIG. 2A) exhibits pressure sensitivity. As shownin FIG. 20, elevating the pressure employed during HTHP processing fromabout 1 atmosphere (atm) (about 0.056 kilobar (kbar)) to anotherpressure P1, such as a pressure greater than or equal to about 55 kbar,raises the upper temperature boundary (e.g., upper metastability line)of the L+D+MC phase field. To maximize diamond density in the cuttingtable 212 (FIG. 2B), the temperature(s) employed during the HTHPprocessing should be at or substantially proximate the upper temperatureboundary of L+D+MC phase field (i.e., the lower temperature boundary ofthe L+D phase field). Accordingly, employing the relatively higherpressure P1 during the HTHP processing may increase the temperaturerequired to facilitate maximized diamond density in the cutting table212. As also shown in FIG. 20, elevating the pressure employed duringHTHP processing from the pressure P1 to yet another pressure P2, mayfurther raise the upper temperature boundary of the L+D+MC phase field.Accordingly, the pressure(s) employed during the HTHP processing may beused to selectively control the material composition (e.g., carbidecontent, diamond content, etc.) of the cutting table 212 (FIG. 2B) andthe HTHP processing temperature(s) used to form the cutting table 212(FIG. 2B).

FIG. 21 is a phase diagram illustrating how different homogenized bindercompositions of the supporting substrate 204 (FIG. 2B) may at leastaffect the range (e.g., boundaries) of the L+D+κ-carbide phase fieldduring the formation of the cutting table 212 (FIG. 2B), and hence, thetemperature(s) employed during the HTHP processing to form the cuttingtable 212. As shown in FIG. 21, a homogenized binder composition Bincluding a relatively higher ratio of Al to Co may facilitate a higherupper temperature boundary (e.g., upper metastability line) of theL+D+κ-carbide phase field than another homogenized binder composition Aincluding a relatively lower ratio of Al to Co. Put another way,employing a supporting substrate 204 including the homogenized bindercomposition B may increase the temperature required to exit theL+D+κ-carbide phase and enter the L+D phase field desirable forincreased (e.g., maximized) diamond density in the cutting table 212relative to a supporting substrate 204 including the homogenized bindercomposition A. Accordingly, the material composition of the homogenizedbinder of the supporting substrate 204 may also be used to selectivelycontrol the material composition (e.g., carbide content, diamondcontent, etc.) of the cutting table 212 (FIG. 2B) and the HTHPprocessing temperature(s) used to form the cutting table 212 (FIG. 2B).

With returned reference to FIG. 2B, the homogenized binder diffused intothe diamond powder 202 (FIG. 2B) during the HTHP process is convertedinto a thermally stable material that does not promote (e.g., catalyze)the back-conversion of diamond to graphitic carbon. The thermally stablematerial may at least partially (e.g., substantially) fill interstitialspaces between the inter-bonded diamond particles of the cutting table212, and may be formed of and include κ-carbide precipitates, such asCo₃AlC_(1-x) precipitates, where 0≤x≤0.5. C may render the κ-carbideprecipitates stable at ambient pressure and temperature conditions. Inaddition, under HTHP processing conditions that promote κ-carbideformation, W of the homogenized binder may partition to and react withcatalytic Co.

In addition to κ-carbide precipitates, the thermally stable material ofthe cutting table 212 may include one or more intermetallic compoundphase precipitates. By way of non-limiting example, the thermally stablematerial may include one or more of FCC L1₂ phase (e.g., gamma prime(γ′) phase) precipitates, such as Co₃(Al,W) precipitates and/or(Co,X)₃(Al,W,Z) precipitates, wherein X comprises at least one element(e.g., Ni, Fe) that is able to occupy a site of Co in Co₃(Al,W), and Zcomprises at least one element that is able to occupy a site of Al or Win Co₃(Al,W); FCC DO₂₂ phase precipitates, such as Al₃W precipitates;D8₅ phase precipitates, such as Co₇W₆ precipitates; and DO₁₉ phaseprecipitates, such as Co₃W precipitates. In some embodiments, thethermally stable material of the cutting table 212 is formed of andincludes κ-carbide precipitates and FCC L1₂ phase precipitates.

The thermally stable material of the cutting table 212 may also includeother precipitates formed of and including elements (e.g., Co, Al, W, C,X, Z) of the homogenized binder of the supporting substrate 204. By wayof non-limiting example, the thermally stable material may include, beta(β) phase precipitates, such as CoAl; FCC L1₀ phase (e.g., gamma (γ)phase) precipitates; and/or other carbide precipitates, such as WCprecipitates and/or M_(x)C precipitates, where x>2 and M=Co,W.

The types and amounts of precipitates (e.g., κ-carbide precipitates,intermetallic compound phase precipitates, other precipitates) presentin the thermally stable material of the cutting table 212 at leastpartially depends on the material composition (including componentratios) of the homogenized binder of the supporting substrate 204, andon the processing conditions (e.g., HTHP processing conditions, such aspressure(s) and temperature(s)) employed to form the cutting table 212using the homogenized binder of the supporting substrate 204. By way ofnon-limiting example, under the conditions (e.g., homogenized bindercompositions, pressures, temperatures) promoting the partition of W toFCC L1₂ phase precipitates (e.g., Co₃(Al,W) precipitates), the formationof WC precipitates and/or M_(x)C precipitates (where x>2 and M=Co,W) maybe promoted, and the formation of κ-carbide precipitates may besuppressed.

The material composition of the homogenized binder present withininterstitial spaces of the cutting table 212 following the formation ofinter-bonded diamond particles thereof, including the types and amountsof elements included in the homogenized binder, may affect theproperties of the thermally stable material formed within theinterstitial spaces of the cutting table 212 as the homogenized binderages. W partitioning of the homogenized binder may promote solidsolution strengthening of the catalytic Co phase if local portioningoccurs away from formed k-carbide, may locally stabilize the FCC L1₂phase precipitates of the thermally stable material in the absence ofκ-carbide precipitates, and may arrest lattice dislocation between theFCC L1₂ phase precipitates, the κ-carbide precipitates, and the γ phasematrix (if any) of the thermally stable material. Al of the homogenizedbinder may facilitate FCC ordering in the form FCC L1₂ phaseprecipitates and κ-carbide precipitates, and may improve thehigh-temperature strength of the thermally stable material. C of thehomogenized binder may facilitate the formation of the κ-carbideprecipitates, may promote favorable melting characteristics of thehomogenized binder, and may also increase the high-temperature strengthof the thermally stable material. In addition, various other elementsthat may, optionally, be included in the homogenized binder may alsoenhance one or more properties of the thermally stable material formedtherefrom.

Optionally, following formation, the cutting table 212 may be subjectedto at least one solution treatment process to modify the materialcomposition of the thermally stable material thereof. The solutiontreatment process may, for example, decompose κ-carbide precipitates(e.g., Co₃AlC_(1-x) precipitates, where 0≤x≤0.5) of the thermally stablematerial into to one or more other precipitates, such as FCC L1₂ phaseprecipitates (e.g., Co₃(Al,W) precipitates and/or (Co,X)₃(Al,W,Z)precipitates, wherein X comprises at least one element (e.g., Ni, Fe)that is able to occupy a site of Co in Co₃(Al,W), and Z comprises atleast one element that is able to occupy a site of Al or W inCo₃(Al,W)). By way of non-limiting example, if the homogenized binder ofthe supporting substrate 204 includes from about 66 wt % Co to about 90wt % Co, from about 5 wt % Al to about 15 wt % Al, from about 0.1 wt % Cto about 0.2 wt % C, and from about 5 wt % W to about 30 wt % W, andeffectuates the formation of a thermally stable material includingκ-carbide precipitates (e.g., Co₃AlC_(1-x) precipitates, where 0≤x≤0.5)in the cutting table 212, the cutting table 212 may optionally besubjected to a solution treatment process that heats of the thermallystable material to a temperature within a range of from about 1300° C.to about 1500° C. at a pressure above the Berman-Simon line, such as apressure greater than or equal to about 45 kbar, to decompose theκ-carbide precipitates and form FCC L1₂ phase precipitates. If employed,the cutting table 212 may be subjected to a single (e.g., only one)solution treatment process at a single temperature within the range offrom about 1300° C. to about 1500° C. under pressure above theBerman-Simon line, or may be subjected to a multiple (e.g., more thanone) solution treatment processes at a multiple temperatures within therange of from about 1300° C. to about 1500° C. under pressure above theBerman-Simon line. Multiple solution treatment process at differenttemperatures may, for example, facilitate the formation of precipitates(e.g., FCC L1₂ phase precipitates) having different grain sizes than oneanother. Relatively larger precipitate sizes may enhancehigh-temperature properties (e.g., creep rupture properties) of thethermally stable material, and relatively smaller precipitate sizes mayenhance room-temperature properties of the thermally stable material.

The thermally stable material may at least partially (e.g.,substantially) coat (e.g., cover) surfaces of the inter-bonded diamondparticles of the cutting table 212. The thermally stable material may beformed directly on the surfaces of the inter-bonded diamond particles ofthe cutting table 212, and may at least partially impede (e.g.,substantially prevent) back-conversion of the inter-bonded diamondparticles to other forms or phases of carbon (e.g., graphitic carbon,amorphous carbon, etc.). In some embodiments, substantially all of thecatalytic Co adjacent the inter-bonded diamond particles of the cuttingtable 212 is partitioned (e.g., incorporated) into κ-carbideprecipitates (e.g., Co₃AlC_(1-x) precipitates, where 0≤x≤0.5) and/orother precipitates (e.g., FCC L1₂ phase precipitates; FCC DO₂₂ phaseprecipitates; D8₅ phase precipitates; DO₁₉ phase precipitates; β phaseprecipitates; FCC L1₀ phase precipitates; WC precipitates; M_(x)Cprecipitates, where x>2 and M=Co,W). Accordingly, the Co of thethermally stable material may not catalyze reactions that decompose theinter-bonded diamond particles during normal use and operation of thecutting table 212. In additional embodiments, some amount of unreactedCo may be present within the thermally stable material. However, thegrain sizes and distributions of the κ-carbide precipitates and/or otherprecipitates may be controlled to limit the exposure of the inter-bondeddiamond particles of the cutting table 212 to such catalytic Co.

The cutting table 212 may exhibit enhanced abrasion resistance andthermal stability up to a melting temperature or theoretical diamondstability temperature, at or near atmospheric conditions, whichever islower, of the thermally stable material. For example, if the meltingtemperature of the thermally stable material is about 1,200° C., thecutting table 212 may be thermally and physically stable at temperatureswithin a range from about 1,000° C. to about 1,100° C., whichcorresponds to the theoretical limit of diamond stability under or nearatmospheric conditions (assuming no oxidation occurs). The thermallystable material within interstitial spaces between the inter-bondeddiamond particles of the cutting table 212 may be thermodynamicallystable at ambient pressure and temperatures, as well as at temperaturesand pressures experienced, for example, during downhole drilling. Thethermally stable material may render the cutting table 212 thermallystable without having to remove (e.g., leach) material from theinterstitial spaces of the cutting table 212.

FIG. 3 illustrates a cutting element 300 in accordance with embodimentsof the disclosure. The cutting element 300 includes a supportingsubstrate 304, and a cutting table 302 bonded to the supportingsubstrate 304 at an interface 306. The supporting substrate 304 may havesubstantially the same material composition as the supporting substrate204 previously described with reference to FIGS. 2A and 2B, and may beformed in accordance with the methods previously described withreference to FIG. 1. The cutting table 302 may be disposed directly onthe supporting substrate 304, and may exhibit at least one lateral sidesurface 308 (also referred to as the “barrel” of the cutting table 302),a cutting face 310 (also referred to as the “top” of the cutting table302) opposite the interface 306 between the supporting substrate 304 andthe cutting table 302, and at least one cutting edge 312 at a peripheryof the cutting face 310. The material composition and the materialdistribution of the cutting table 302 may be substantially similar tothe material composition and the material distribution of the cuttingtable 212 previously described with respect to FIG. 2B.

The cutting table 302 and the supporting substrate 304 may eachindividually exhibit a generally cylindrical column shape, and theinterface 306 between the supporting substrate 304 and cutting table 302may be substantially planar. A ratio of a height of the cutting element300 to an outer diameter of the cutting element 300 may be within arange of from about 0.1 to about 50, and a height (e.g., thickness) ofthe cutting table 302 may be within a range of from about 0.3millimeters (mm) to about 5 mm. Surfaces (e.g., the lateral side surface308, the cutting face 310) of the cutting table 302 adjacent the cuttingedge 312 may each be substantially planar, or one or more of thesurfaces of the cutting table 302 adjacent the cutting edge 312 may beat least partially non-planar. Each of the surfaces of the cutting table302 may be polished, or one or more of the surfaces of the cutting table302 may be at least partially non-polished (e.g., lapped, but notpolished). In addition, the cutting edge 312 of the cutting table 302may be at least partially (e.g., substantially) chamfered (e.g.,beveled), may be at least partially (e.g., substantially) radiused(e.g., arcuate), may be partially chamfered and partially radiused, ormay be non-chamfered and non-radiused. As shown in FIG. 3, in someembodiments, the cutting edge 312 is chamfered. If the cutting edge 312is at least partially chamfered, the cutting edge 312 may include asingle (e.g., only one) chamfer, or may include multiple (e.g., morethan one) chamfers (e.g., greater than or equal to two (2) chamfers,such as from two (2) chamfers to 1000 chamfers). If present, each of thechamfers may individually exhibit a width less than or equal to about0.1 inch, such as within a range of from about 0.001 inch to about 0.1inch.

While FIG. 3 depicts a particular configuration of the cutting element300, including particular configurations of the cutting table 302 andthe supporting substrate 304 thereof, different configurations may beemployed. One or more of the cutting table 302 and the supportingsubstrate 304 may, for example, exhibit a different shape (e.g., a domeshape, a conical shape, a frusto conical shape, a rectangular columnshape, a pyramidal shape, a frusto pyramidal shape, a fin shape, apillar shape, a stud shape, or an irregular shape) and/or a differentsize (e.g., a different diameter, a different height), and/or theinterface 306 between the supporting substrate 304 and cutting table 302may be non-planar (e.g., convex, concave, ridged, sinusoidal, angled,jagged, v-shaped, u-shaped, irregularly shaped, etc.). By way ofnon-limiting example, in accordance with additional embodiments of thedisclosure, FIGS. 4 through 15 show simplified side elevation views ofcutting elements exhibiting different configurations than that of thecutting element 300 shown in FIG. 3. Throughout FIGS. 4 through 15 andthe description associated therewith, functionally similar features arereferred to with similar reference numerals incremented by 100. To avoidrepetition, not all features shown in FIGS. 4 through 15 are describedin detail herein. Rather, unless described otherwise below, a featuredesignated by a reference numeral that is a 100 increment of thereference numeral of a feature previously-described with respect to oneor more of FIGS. 3 through 15 (whether the previously-described featureis first described before the present paragraph, or is first describedafter the present paragraph) will be understood to be substantiallysimilar to the previously-described feature.

FIG. 4 illustrates a simplified side elevation view of a cutting element400, in accordance with another embodiment of the disclosure. Thecutting element 400 includes a supporting substrate 404, and a cuttingtable 402 attached to the supporting substrate 404 at an interface 406.The supporting substrate 404 and the cutting table 402 may respectivelyhave a material composition and a material distribution substantiallysimilar to the material composition and the material distribution of thesupporting substrate 204 and the cutting table 212 previously describedwith reference to FIGS. 2A and 2B. As shown in FIG. 4, the cutting table402 exhibits a generally conical shape, and includes a conical sidesurface 408 and an apex 401 (e.g., tip) that at least partially define acutting face 410 of the cutting table 402. The apex 401 comprises an endof the cutting table 404 opposing another end of the cutting table 402secured to the supporting substrate 404 at the interface 406. Theconical side surface 408 extends upwardly and inwardly from or proximatethe interface 406 toward the apex 401. The apex 401 may be centeredabout a central longitudinal axis of the cutting element 400, and may beat least partially (e.g., substantially) radiused (e.g., arcuate). Theconical side surface 408 may be defined by at least one angle θ betweenthe conical side surface 408 and a phantom line 403 (shown in FIG. 4with dashed lines) longitudinally extending from a lateral side surfaceof the supporting substrate 404. The angle θ may, for example, be withina range of from about five degrees (5°) to about eighty-five degrees(85°), such as from about fifteen degrees (15°) to about seventy-fivedegrees (75°), from about thirty degrees (30°) to about sixty degrees(60°), or from about forty-five degrees 45°) to about sixty degrees(60°). Ratios of a height of the cutting element 400 to outer diametersof the cutting element 400 may be within a range of from about 0.1 toabout 48. The cutting element 400, including the cutting table 402 andthe supporting substrate 404 thereof, may be formed using a processsubstantially similar to that previously described with reference toFIGS. 2A and 2B.

FIG. 5 illustrates a simplified side elevation view of a cutting element500, in accordance with another embodiment of the disclosure. Thecutting element 500 includes a supporting substrate 504, and a cuttingtable 502 attached to the supporting substrate 504 at an interface 506.The supporting substrate 504 and the cutting table 502 may respectivelyhave a material composition and a material distribution substantiallysimilar to the material composition and the material distribution of thesupporting substrate 204 and the cutting table 212 previously describedwith reference to FIGS. 2A and 2B. As shown in FIG. 5, the cutting table502 exhibits a generally frusto-conical shape, and includes a conicalside surface 508 and an apex 501 (e.g., tip) that at least partiallydefine a cutting face 510 of the cutting table 502. The apex 501comprises an end of the cutting table 504 opposing another end of thecutting table 502 secured to the supporting substrate 504 at theinterface 506. The conical side surface 508 extends upwardly andinwardly from or proximate the interface 506 toward the apex 501. Theapex 501 may be centered about and may extend symmetrically outwarddiametrically from and perpendicular to a central longitudinal axis ofthe cutting element 500. The apex 501 may exhibit a circular lateralshape or a non-circular lateral shape (e.g., a laterally elongatedshape, such as a rectangular shape, a non-rectangular quadrilateralshape, an elliptical shape, etc.), and may be substantially flat (e.g.,two-dimensional, planar, non-radiused, non-arcuate, non-curved). Theconical side surface 508 may be defined by at least one angle θ betweenthe conical side surface 508 and a phantom line 503 (shown in FIG. 5with dashed lines) longitudinally extending from a lateral side surfaceof the supporting substrate 504. The angle θ may, for example, be withina range of from about 5° to about 85°, such as from about 15° to about75°, from about 30° to about 60°, or from about 45° to about 60°.Interfaces (e.g., edges) between the conical side surface 508 and theapex 501 may be smooth and transitioned (e.g., chamfered and/orradiused), or may be sharp (e.g., non-chamfered and non-radiused). Aratio of an outer diameter of the cutting table 502 at the apex 501relative to an outer diameter of the cutting table 502 at the interface506 may be within a range of from about 0.001 to about 1. The cuttingelement 500, including the cutting table 502 and the supportingsubstrate 504 thereof, may be formed using a process substantiallysimilar to that previously described with reference to FIGS. 2A and 2B.

FIG. 6 illustrates a simplified side elevation view of a cutting element600, in accordance with another embodiment of the disclosure. Thecutting element 600 includes a supporting substrate 604, and a cuttingtable 602 attached to the supporting substrate 604 at an interface 606.The supporting substrate 604 and the cutting table 602 may respectivelyhave a material composition and a material distribution substantiallysimilar to the material composition and the material distribution of thesupporting substrate 204 and the cutting table 212 previously describedwith reference to FIGS. 2A and 2B. As shown in FIG. 6, the cutting table602 exhibits a generally frusto-conical shape, and includes a conicalside surface 608 and an apex 601 (e.g., tip) that at least partiallydefine a cutting face 610 of the cutting table 602. The apex 601comprises an end of the cutting table 604 opposing another end of thecutting table 602 secured to the supporting substrate 604 at theinterface 606. The conical side surface 608 extends upwardly andinwardly from or proximate the interface 606 toward the apex 601. Acenter of the apex 601 may be laterally offset from a centrallongitudinal axis of the cutting element 600. The apex 601 may exhibit acircular lateral shape or a non-circular lateral shape (e.g., alaterally elongated shape, such as a rectangular shape, anon-rectangular quadrilateral shape, an elliptical shape, etc.), and maybe substantially flat (e.g., two-dimensional, planar, non-radiused,non-arcuate, non-curved). At least one region of the conical sidesurface 608 may be defined by at least one angle θ between the conicalside surface 608 and a phantom line 603 (shown in FIG. 6 with dashedlines) longitudinally extending from a lateral side surface of thesupporting substrate 604, and at least one other region of the conicalside surface 608 may be defined by at least one additional angle abetween the conical side surface 608 and the phantom line 603. The angleθ may be greater than the additional angle α. Each of the angle θ andthe additional angle a may individually be within a range of from about5° to about 85°. Interfaces (e.g., edges) between the conical sidesurface 608 and the apex 601 may be smooth and transitioned (e.g.,chamfered and/or radiused), or may be sharp (e.g., non-chamfered andnon-radiused). A ratio of an outer diameter of the cutting table 602 atthe apex 601 relative to an outer diameter of the cutting table 602 atthe interface 606 may be within a range of from about 0.001 to about 1.The cutting element 600, including the cutting table 602 and thesupporting substrate 604 thereof, may be formed using a processsubstantially similar to that previously described with reference toFIGS. 2A and 2B.

FIG. 7 illustrates a simplified side elevation view of a cutting element700, in accordance with another embodiment of the disclosure. Thecutting element 700 includes a supporting substrate 704, and a cuttingtable 702 attached to the supporting substrate 704 at an interface 706.The supporting substrate 704 and the cutting table 702 may respectivelyhave a material composition and the material distribution substantiallysimilar to a material composition and the material distribution of thesupporting substrate 204 and the cutting table 212 previously describedwith reference to FIGS. 2A and 2B. As shown in FIG. 7, the cutting table702 exhibits a chisel shape, and includes opposing conical side surfaces708, opposing flat side surfaces 705, and an apex 701 (e.g., tip) thatat least partially define a cutting face 710 of the cutting table 702.The apex 701 comprises an end of the cutting table 704 opposing anotherend of the cutting table 702 secured to the supporting substrate 704 atthe interface 706. The opposing conical side surfaces 708 extendupwardly and inwardly from or proximate the interface 706 toward theapex 701. The opposing flat side surfaces 705 intervene between theopposing conical side surfaces 708, and also extend upwardly andinwardly from or proximate the interface 706 toward the apex 701. Theapex 701 may be centered about and may extend symmetrically outwarddiametrically from and perpendicular to a central longitudinal axis ofthe cutting element 700. The apex 701 may exhibit a circular lateralshape or a non-circular lateral shape (e.g., a laterally elongatedshape, such as a rectangular shape, a non-rectangular quadrilateralshape, an elliptical shape, etc.), and may be either arcuate (e.g.,non-planar, radiused, curved) or substantially flat (e.g.,two-dimensional, planar, non-radiused, non-arcuate, non-curved). Theopposing conical side surfaces 708 may be defined by at least one angleθ between each of the opposing conical side surfaces 708 and a phantomline 703 (shown in FIG. 7 with dashed lines) longitudinally extendingfrom a lateral side surface of the supporting substrate 704. The angle θmay, for example, be within a range of from about 5° to about 85°, suchas from about 15° to about 75°, from about 30° to about 60°, or fromabout 45° to about 60°. The opposing flat side surfaces 705 mayindividually be defined by at least one other angle between the flatsurface 705 and the phantom line 703, wherein the at least one otherangle is different than (e.g., less than or greater than) the angle θbetween each of the opposing conical side surfaces 708 and the phantomline 703. Interfaces between the opposing conical side surfaces 708, theopposing flat side surfaces 705, and the apex 701 may be smooth andtransitioned (e.g., chamfered and/or radiused), or may be sharp (e.g.,non-chamfered and non-radiused). In some embodiments, a maximum heightof the cutting element 700 is less than or equal to about 48 mm. Thecutting element 700, including the cutting table 702 and the supportingsubstrate 704 thereof, may be formed using a process substantiallysimilar to that previously described with reference to FIGS. 2A and 2B.

FIG. 8 illustrates a simplified side elevation view of a cutting element800, in accordance with another embodiment of the disclosure. Thecutting element 800 includes a supporting substrate 804, and a cuttingtable 802 attached to the supporting substrate 804 at an interface 806.The supporting substrate 804 and the cutting table 802 may respectivelyhave a material composition and a material distribution substantiallysimilar to the material composition and the material distribution of thesupporting substrate 204 and the cutting table 212 previously describedwith reference to FIGS. 2A and 2B. As shown in FIG. 8, the cutting table802 exhibits a chisel shape, and includes opposing conical side surfaces808, opposing flat side surfaces 805, and an apex 801 (e.g., tip) thatat least partially define a cutting face 810 of the cutting table 802.The apex 801 comprises an end of the cutting table 804 opposing anotherend of the cutting table 802 secured to the supporting substrate 804 atthe interface 806. The opposing conical side surfaces 808 extendupwardly and inwardly from or proximate the interface 806 toward theapex 801. The opposing flat side surfaces 805 intervene between theopposing conical side surfaces 808, and also extend upwardly andinwardly from or proximate the interface 806 toward the apex 801. Acenter of the apex 801 may be laterally offset from a centrallongitudinal axis of the cutting element 800. The apex 801 may exhibit acircular lateral shape or a non-circular lateral shape (e.g., alaterally elongated shape, such as a rectangular shape, anon-rectangular quadrilateral shape, an elliptical shape, etc.), and maybe either arcuate (e.g., non-planar, radiused, curved) or substantiallyflat (e.g., two-dimensional, planar, non-radiused, non-arcuate,non-curved). One of the opposing conical side surfaces 808 may bedefined by at least one angle θ between the conical side surface 808 anda phantom line 803 (shown in FIG. 8 with dashed lines) longitudinallyextending from a lateral side surface of the supporting substrate 804,and another of the opposing conical side surfaces 808 may be defined byanother angle less than the angle θ. The angle θ may be within a rangeof from about 5° to about 85°, such as from about 15° to about 75°, fromabout 30° to about 60°, or from about 45° to about 60°. The opposingflat side surfaces 805 may individually be defined by at least oneadditional angle between the flat side surface 805 and the phantom line803, wherein the at least one additional angle is different than (e.g.,less than or greater than) the angle θ. Interfaces between the opposingconical side surfaces 808, the opposing flat side surfaces 805, and theapex 801 may be smooth and transitioned (e.g., chamfered and/orradiused), or may be sharp (e.g., non-chamfered and non-radiused). Thecutting element 800, including the cutting table 802 and the supportingsubstrate 804 thereof, may be formed using a process substantiallysimilar to that previously described with reference to FIGS. 2A and 2B.

FIG. 9 illustrates a simplified side elevation view of a cutting element900, in accordance with another embodiment of the disclosure. Thecutting element 900 includes a supporting substrate 904, and a cuttingtable 902 attached to the supporting substrate 904 at an interface 906.The supporting substrate 904 and the cutting table 902 may respectivelyhave a material composition and a material distribution substantiallysimilar to the material composition and the material distribution of thesupporting substrate 204 and the cutting table 212 previously describedwith reference to FIGS. 2A and 2B. As shown in FIG. 9, the cutting table902 exhibits a chisel shape, and includes opposing conical side surfaces908, opposing flat side surfaces 905, and an apex 901 (e.g., tip) thatat least partially define a cutting face 910 of the cutting table 902.The configuration of the cutting table 902 is similar to theconfiguration of the cutting table 802 (FIG. 8) except that the apex 901of the cutting table 902 may extend non-perpendicular (e.g.,non-orthogonal) to a central longitudinal axis of the cutting element900. For example, the apex 901 of the cutting table 902 may exhibit anegative slope or a positive slope. The cutting element 900, includingthe cutting table 902 and the supporting substrate 904 thereof, may beformed using a process substantially similar to that previouslydescribed with reference to FIGS. 2A and 2B.

FIG. 10 illustrates a simplified side elevation view of a cuttingelement 1000, in accordance with another embodiment of the disclosure.The cutting element 1000 includes a supporting substrate 1004, and acutting table 1002 attached to the supporting substrate 1004 at aninterface 1006. The supporting substrate 1004 and the cutting table 1002may respectively have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of the supporting substrate 204 and the cutting table 212previously described with reference to FIGS. 2A and 2B. As shown in FIG.10, the cutting table 1002 exhibits a generally conical shape, andincludes a semi-conical side surface 1008 and an apex 1001 (e.g., tip)that at least partially define a cutting face 1010 of the cutting table1002. The apex 1001 comprises an end of the cutting table 1004 opposinganother end of the cutting table 1002 secured to the supportingsubstrate 1004 at the interface 1006. The apex 1001 may be sharp (e.g.,non-radiused), and may be centered about a central longitudinal axis ofthe cutting element 1000. For example, the apex 1001 may be a single(e.g., only one) point most distal from the interface 1006 between thesupporting substrate 1004 and a cutting table 1002, or may be a singleline most distal from the interface 1006 between the supportingsubstrate 1004 and a cutting table 1002. The semi-conical side surface1008 may include a first portion adjacent the supporting substrate 1004and extending substantially parallel to a phantom line 1003 (shown inFIG. 10 with dashed lines) longitudinally extending from a lateral sidesurface of the supporting substrate 1004, and a second portion betweenthe first portion and the apex 1001 and extending at an angle θ relativeto the phantom line 1003. The angle θ may, for example, be within arange of from about 5° to about 85°, such as from about 15° to about75°, from about 30° to about 60°, or from about 45° to about 60°. Thecutting element 1000, including the cutting table 1002 and thesupporting substrate 1004 thereof, may be formed using a processsubstantially similar to that previously described with reference toFIGS. 2A and 2B.

FIG. 11 illustrates a simplified side elevation view of a cuttingelement 1100, in accordance with another embodiment of the disclosure.The cutting element 1100 includes a supporting substrate 1104, and acutting table 1102 attached to the supporting substrate 1104 at aninterface 1106. The supporting substrate 1104 and the cutting table 1102may respectively have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of the supporting substrate 204 and the cutting table 212previously described with reference to FIGS. 2A and 2B. As shown in FIG.11, the cutting table 1102 exhibits a non-cylindrical shape, andincludes a semi-conical side surface 1108 and an apex 1101 (e.g., tip)that at least partially define a cutting face 1110 of the cutting table1102. The apex 1101 comprises an end of the cutting table 1104 opposinganother end of the cutting table 1102 secured to the supportingsubstrate 1104 at the interface 1106. The apex 1101 may be sharp (e.g.,non-radiused), and may be centered about a central longitudinal axis ofthe cutting element 1100. For example, the apex 1101 may be a single(e.g., only one) point most distal from the interface 1106 between thesupporting substrate 1104 and a cutting table 1102, or may be a singleline most distal from the interface 1106 between the supportingsubstrate 1104 and a cutting table 1102. The semi-conical side surface1108 may include a first portion adjacent the supporting substrate 1104and extending substantially parallel to a phantom line 1103 (shown inFIG. 11 with dashed lines) longitudinally extending from a lateral sidesurface of the supporting substrate 1104, a second portion adjacent thefirst portion and extending at an angle γ relative to the phantom line1103, and a third portion between the second portion and the apex 1101and extending at an angle θ relative to the phantom line 1103. The angleθ between the third portion of the semi-conical side surface 1108 andthe phantom line 1103 may be greater than the angle γ between the secondportion of the semi-conical side surface 1108 and the phantom line 1103.Each of the angle γ between the second portion of the semi-conical sidesurface 1108 and the phantom line 1103 and angle θ between the thirdportion of the semi-conical side surface 1108 and the phantom line 1103may individually be within a range of from about 5° to about 85°. Thecutting element 1100, including the cutting table 1102 and thesupporting substrate 1104 thereof, may be formed using a processsubstantially similar to that previously described with reference toFIGS. 2A and 2B.

FIG. 12 illustrates a simplified side elevation view of a cuttingelement 1200, in accordance with another embodiment of the disclosure.The cutting element 1200 includes a supporting substrate 1204, and acutting table 1202 attached to the supporting substrate 1204 at aninterface 1206. The supporting substrate 1204 and the cutting table 1202may respectively have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of the supporting substrate 204 and the cutting table 212previously described with reference to FIGS. 2A and 2B. As shown in FIG.12, the cutting table 1202 exhibits a non-cylindrical shape, andincludes a semi-conical side surface 1208 and an apex 1201 (e.g., tip)that at least partially define a cutting face 1210 of the cutting table1202. The apex 1201 comprises an end of the cutting table 1204 opposinganother end of the cutting table 1202 secured to the supportingsubstrate 1204 at the interface 1206. The apex 1201 may be radiused(e.g., arcuate, curved), and may be centered about a centrallongitudinal axis of the cutting element 1200. The semi-conical sidesurface 1208 may include a first portion adjacent the supportingsubstrate 1204 and extending substantially parallel to a phantom line1203 (shown in FIG. 12 with dashed lines) longitudinally extending froma lateral side surface of the supporting substrate 1204, and a secondportion between the first portion and the apex 1201 and extending at anangle θ relative to the phantom line 1203. The angle θ may, for example,be within a range of from about 5° to about 85°, such as from about 15°to about 75°, from about 30° to about 60°, or from about 45° to about60°. The cutting element 1200, including the cutting table 1202 and thesupporting substrate 1204 thereof, may be formed using a processsubstantially similar to that previously described with reference toFIGS. 2A and 2B.

FIG. 13 illustrates a simplified side elevation view of a cuttingelement 1300, in accordance with another embodiment of the disclosure.The cutting element 1300 includes a supporting substrate 1304, and acutting table 1302 attached to the supporting substrate 1304 at aninterface 1306. The supporting substrate 1304 and the cutting table 1302may respectively have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of the supporting substrate 204 and the cutting table 212previously described with reference to FIGS. 2A and 2B. As shown in FIG.13, the cutting table 1202 exhibits a generally hemispherical shape, andincludes a semi-hemispherical side surface 1308 and an apex 1301 (e.g.,tip) that at least partially define a cutting face 1310 of the cuttingtable 1302. The apex 1301 comprises an end of the cutting table 1304opposing another end of the cutting table 1302 secured to the supportingsubstrate 1304 at the interface 1306. The apex 1301 may be radiused(e.g., arcuate, curved), and may be centered about a centrallongitudinal axis of the cutting element 1300. The semi-hemisphericalside surface 1308 may include a first portion adjacent the supportingsubstrate 1304 and extending substantially parallel to a lateral sidesurface of the supporting substrate 1304, and a second portion extendingin an arcuate (e.g., curved) path between the first portion and the apex1301. The cutting element 1300, including the cutting table 1302 and thesupporting substrate 1304 thereof, may be formed using a processsubstantially similar to that previously described with reference toFIGS. 2A and 2B.

FIG. 14 illustrates a simplified side elevation view of a cuttingelement 1400, in accordance with another embodiment of the disclosure.The cutting element 1400 includes a supporting substrate 1404, and acutting table 1402 attached to the supporting substrate 1404 at aninterface 1406. The supporting substrate 1404 and the cutting table 1402may respectively have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of the supporting substrate 204 and the cutting table 212previously described with reference to FIGS. 2A and 2B. As shown in FIG.14, the cutting table 1402 exhibits a semi-hemispherical shape, andincludes a semi-hemispherical side surface 1408, a flat side surface\1407, and an apex 1401 (e.g., tip) that at least partially define acutting face 1410 of the cutting table 1402. The apex 1401 comprises anend of the cutting table 1404 opposing another end of the cutting table1402 secured to the supporting substrate 1404 at the interface 1406. Thesemi-hemispherical side surface 1408 extends upwardly and inwardly fromor proximate the interface 1406 toward the apex 1401. The flat sidesurface 1407 opposes the semi-hemispherical side surface 1408, and alsoextends upwardly and inwardly from or proximate the interface 1406toward the apex 1401. The apex 1401 may be centered a longitudinal axisof the cutting element 1400. The semi-hemispherical side surface 1408may include a first portion adjacent the supporting substrate 1404 andextending substantially parallel to a lateral side surface of thesupporting substrate 1404, and a second portion extending in an arcuate(e.g., curved) path between the first portion and the apex 1401. Theflat side surface 1407 may be substantially planar, and may be angledrelative to a lateral side surface of the supporting substrate 1404.Interfaces between the semi-hemispherical side surface 1408, the flatside surface 1407, and the apex 1401 may be smooth and transitioned(e.g., chamfered and/or radiused), or may be sharp (e.g., non-chamferedand non-radiused). The cutting element 1400, including the cutting table1402 and the supporting substrate 1404 thereof, may be formed using aprocess substantially similar to that previously described withreference to FIGS. 2A and 2B.

FIG. 15 illustrates a simplified side elevation view of a cuttingelement 1500, in accordance with another embodiment of the disclosure.The cutting element 1500 includes a supporting substrate 1504, and acutting table 1502 attached to the supporting substrate 1504 at aninterface 1506. The supporting substrate 1504 and the cutting table 1502may respectively have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of the supporting substrate 204 and the cutting table 212previously described with reference to FIGS. 2A and 2B. As shown in FIG.15, the cutting table 1502 exhibits a semi-hemispherical shape, andincludes a semi-hemispherical side surface 1508, a flat side surface1507, and an apex 1501 (e.g., tip) that at least partially define acutting face 1510 of the cutting table 1502. The configuration of thecutting table 1502 is similar to the configuration of the cutting table1402 (FIG. 14) except that the apex 1501 of the cutting table 1502 islaterally offset from a central longitudinal axis of the cutting element1500. Laterally offsetting the apex 1501 from the central longitudinalaxis of the cutting element 1500 may extend the dimensions of thesemi-hemispherical side surface 1508 relative to those of thesemi-hemispherical side surface 1408 (FIG. 14) of the cutting element1400 (FIG. 14), and may reduce the dimensions and angle of the flat sidesurface 1507 relative to those of the flat side surface 1407 (FIG. 14)of the cutting element 1400 (FIG. 14). The cutting element 1500,including the cutting table 1502 and the supporting substrate 1504thereof, may be formed using a process substantially similar to thatpreviously described with reference to FIGS. 2A and 2B.

The methods of the disclosure may also be employed to form structuresother than cutting elements. Namely, the methods of the disclosure maybe used whenever it is desired to form a structure or device including atable of hard material, such as diamond table (e.g., PDC table). Themethods of disclosure may, for example, be employed to form variousother structures associated with (e.g., employed in) downholeoperations, such as bearing structures (e.g., bearing pads, bearingdiscs, bearing blocks, bearing sleeves), wear structures (e.g., wearpads, wear discs, wear block), block structures, die structures (e.g.,tool die structures, wire die structures), and/or other structures. Byway of non-limiting example, FIGS. 16 and 17 show additional structures(e.g., a bearing structure, a die structure) that may be formed inaccordance with embodiments of the disclosure.

FIG. 16 illustrates a perspective view of a bearing structure 1600, inaccordance with another embodiment of the disclosure. The bearingstructure 1600 includes a supporting substrate 1604, and a hard martialtable 1602 (e.g., PDC table) attached to the supporting substrate 1604at an interface 1606. The supporting substrate 1604 and the cuttingtable 1602 may respectively have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of the supporting substrate 204 and the cuttingtable 212 previously described with reference to FIGS. 2A and 2B. Thebearing structure 1600 may exhibit any desired peripheral geometricconfiguration (e.g., peripheral shape and peripheral size) suitable fora predetermined use of the bearing structure 1600. By way ofnon-limiting example, as shown in FIG. 16, the bearing structure 1600may exhibit an elongate three-dimensional (3D) shape, such as anellipsoidal cylinder shape. In additional embodiments, the bearingstructure 1600 may exhibit a different peripheral shape (e.g., arectangular cylinder shape; circular cylinder shape; a conical shape; afrustoconical shape; truncated versions thereof; or an irregular shape,such as a complex shape complementary to a recess or socket in anearth-boring tool to receive and hold the bearing structure 1600). Inaddition, the interface 1606 between the supporting substrate 1604 andthe hard martial table 1602 may be substantially planar, or may benon-planar (e.g., curved, angled, jagged, sinusoidal, v-shaped,u-shaped, irregularly shaped, combinations thereof, etc.). The bearingstructure 1600, including the hard martial table 1602 and the supportingsubstrate 1604 thereof, may be formed using a process substantiallysimilar to that previously described with reference to FIGS. 2A and 2B.

FIG. 17 illustrates a perspective view of die structure 1700, inaccordance with another embodiment of the disclosure. The die structure1700 includes a hard martial table 1702 (e.g., PDC table), wherein thehard martial table 1702 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of the cutting table 212 previously described withreference to FIG. 2B. The die structure 1700 may exhibit any desiredperipheral geometric configuration (e.g., peripheral shape andperipheral size) suitable for a predetermined use of the die structure1700, such as a peripheral geometric configuration complementary toformation of another structure (e.g., an earth-boring tool structure, awire structure) having a desired and predetermined peripheral geometricconfiguration. By way of non-limiting example, as shown in FIG. 17, thedie structure 1700 may exhibit an at least partially (e.g.,substantially) hollow elongate three-dimensional (3D) shape, such as atubular shape. In additional embodiments, the die structure 1700 mayexhibit a different peripheral shape, such as an at least partiallyhollow form of a conical, cubic, cuboidal, cylindrical,semi-cylindrical, spherical, semi-spherical, triangular prismatic, orirregular shape. The die structure 1700, including the hard martialtable 1702 thereof, may be formed using a process substantially similarto that previously described with reference to FIGS. 2A and 2B.

Embodiments of cutting elements (e.g., the cutting elements 300, 400,500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500 illustratedin FIGS. 3 through 15) described herein may be secured to anearth-boring tool and used to remove subterranean formation material inaccordance with additional embodiments of the disclosure. Theearth-boring tool may, for example, be a rotary drill bit, a percussionbit, a coring bit, an eccentric bit, a reamer tool, a milling tool, etc.As a non-limiting example, FIG. 18 illustrates a fixed-cutter typeearth-boring rotary drill bit 1800 that includes cutting elements 1802.One or more of the cutting elements 1802 may be substantially similar toone or more of the cutting elements 300, 400, 500, 600, 700, 800, 900,1000, 1100, 1200, 1300, 1400, 1500 previously described herein withrespect to FIGS. 3 through 15, and may be formed in accordance to themethods previously described herein with reference to FIGS. 2A and 2B.The rotary drill bit 1800 includes a bit body 1804, and the cuttingelements 1802 are attached to the bit body 1804. The cutting elements1802 may, for example, be brazed, welded, or otherwise secured, withinpockets formed in an outer surface of the bit body 1804. Optionally, therotary drill bit 1800 may also include one or more other structures(e.g., bearing structures, wear structures, block structures) formedaccording to embodiments of the disclosure, such as the bearingstructure 1600 previously described herein with respect to FIG. 16.

While the disclosure is susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, the disclosure is not intended to be limited to the particularforms disclosed. Rather, the disclosure is to cover all modifications,equivalents, and alternatives falling within the scope of the disclosureas defined by the following appended claims and their legal equivalents.

1. A method of forming a supporting substrate for a cutting element,comprising: forming a precursor composition comprising discrete WCparticles, a binding agent, and discrete particles comprising Co, Al,and one or more of C and W; and subjecting the precursor composition toa consolidation process to form a consolidated structure including WCparticles dispersed in a homogenized binder comprising Co, Al, W, and C.2. The method of claim 1, wherein forming a precursor compositioncomprises forming the precursor composition to comprise the discrete WCparticles, the binding agent, and one or more of discrete Co—Al—C alloyparticles and discrete Co—Al—W alloy particles.
 3. The method of claim1, wherein forming the precursor composition comprises forming theprecursor composition to comprise from about 5 wt % discrete Co—Al—Cparticles to about 15 wt % discrete Co—Al—C particles, and from about 85wt % discrete WC particles to about 95 wt % discrete WC particles. 4.The method of claim 1, wherein forming the precursor compositioncomprises forming the precursor composition to comprise about 12 wt %discrete Co—Al—C particles and about 88 wt % discrete WC particles. 5.The method of claim 1, wherein forming a precursor composition furthercomprises forming the precursor composition to comprise at least oneadditive comprising one or more of B, Al, C, Ti, Zr, Hf, V, Nb, Ta, Cr,Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Cu, Ag, Au, Zn, and Cd.
 6. Themethod of claim 1, wherein forming a precursor composition comprisesforming the precursor composition to comprise the discrete WC particles,the binding agent, discrete elemental Co particles, discrete elementalAl particles, and one or more of discrete C particles and discreteelemental W particles.
 7. The method of claim 6, forming the precursorcomposition to comprise the discrete WC particles, the binding agent,discrete element Co particles, discrete elemental Al particles, and oneor more of discrete C particles and discrete elemental W particlescomprises forming precursor composition to comprise from about 4 wt %discrete elemental Co particles to about 15 wt % discrete elemental Coparticles, from about 0.05 wt % discrete elemental Al particles to about3 wt % discrete elemental Al particles, from about 0.013 wt % discrete Cparticles to about 0.3 wt % discrete C particles, and from about 85 wt %discrete WC particles to about 95 wt % discrete WC particles.
 8. Themethod of claim 1, wherein subjecting the precursor composition to aconsolidation process comprises: forming the precursor composition intoa green structure through at least one shaping and pressing process;removing the binding agent from and partially sintering the greenstructure to form a brown structure; and subjecting the brown structureto a densification process to form the consolidated structure.
 9. Themethod of claim 8, wherein subjecting the brown structure to adensification process comprises subjecting the brown structure to one ormore of a sintering process, a HIP process, a sintered-HIP process, anda hot pressing process.
 10. The method of claim 8, further comprisingsubjecting the consolidated structure to at least one supplementalhomogenization process to substantially completely homogenize thehomogenized binder thereof.
 11. A method of forming a cutting element,comprising: providing a supporting substrate comprising WC particlesdispersed within a homogenized binder comprising Co, Al, W, and C;depositing a powder comprising diamond particles directly on thesupporting substrate; subjecting the supporting substrate and the powderto elevated temperatures and elevated pressures to diffuse a portion ofthe homogenized binder of the supporting substrate into the powder andinter-bond the diamond particles; and converting portions of thehomogenized binder within interstitial spaces between the inter-bondeddiamond particles into a thermally stable material comprising κ-carbideprecipitates.
 12. The method of claim 11, wherein providing a supportingsubstrate comprises selecting the supporting substrate to comprise theWC particles dispersed within a homogenized Co—Al—W—C alloy binder. 13.The method of claim 11, wherein subjecting the supporting substrate andthe powder to elevated temperatures and elevated pressures to diffuse aportion of the homogenized binder of the supporting substrate into thepowder comprises heating the supporting substrate and the powder to atleast one temperature greater than the solidus temperature of thehomogenized binder and to at least one pressure greater than 1atmosphere.
 14. The method of claim 11, wherein converting portions ofthe homogenized binder within interstitial spaces between theinter-bonded diamond particles into a thermally stable materialcomprises forming the thermally stable material to comprise one or moreCo₃AlC_(1-x) precipitates, where 0≤x≤0.5.
 15. The method of claim 11,wherein converting portions of the homogenized binder withininterstitial spaces between the inter-bonded diamond particles into athermally stable material comprises forming the thermally stablematerial to further comprise one or more of FCC L1₂ phase precipitates,FCC DO₂₂ phase precipitates, D8₅ phase precipitates, DO₁₉ phaseprecipitates, β phase precipitates, FCC L1₀ phase precipitates, WCprecipitates, and M_(x)C precipitates, where x>2 and M=Co,W.
 16. Themethod of claim 11, further comprising solution treating the thermallystable material to decompose the κ-carbide precipitates thereof into FCCL1₂ phase precipitates.
 17. A method of forming a cutting element,comprising: forming a precursor composition comprising discrete WCparticles, a binding agent, and discrete particles comprising Co, Al,and one or more of C and W; subjecting the precursor composition to aconsolidation process employing a consolidation temperature greater thanor equal to a liquidus temperature of the discrete particles to form asupporting substrate including WC particles dispersed in a homogenizedbinder comprising Co, W, C, and Al; depositing a powder comprisingdiamond particles over the supporting substrate; subjecting thesupporting substrate and the powder to elevated temperatures andelevated pressures to diffuse a portion of the homogenized binder of thesupporting substrate into the powder and inter-bond the diamondparticles; and converting portions of the homogenized binder withininterstitial spaces between the inter-bonded diamond particles into athermally stable material comprising κ-carbide precipitates.
 18. Themethod of claim 17, wherein subjecting the precursor composition to atleast one consolidation process comprises: sintering the precursorcomposition at the consolidation temperature to form a preliminarysupporting substrate comprising the WC particles dispersed in apartially homogenized binder comprising Co, W, C, and Al; and heatingthe preliminary supporting substrate to a temperature greater than aliquidus temperature of the partially homogenized binder to form thesupporting substrate.
 19. The method of claim 18, wherein sintering theprecursor composition further comprises subjecting the precursorcomposition to an applied pressure greater than or equal to about 10megapascals.
 20. The method of claim 19, wherein subjecting thesupporting substrate and the powder to elevated temperatures andelevated pressures comprises heating the supporting substrate and thepowder to a temperature greater than or equal to the liquidustemperature of the homogenized binder of the supporting substrate.